An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.
FAQ Categories: Usage
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Why is FWD required?
Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.