Semiconductors

It stands for Insulated Gate Bipolar Transistor. It is a voltage-controlled device that has an insulated gate with an oxide insulating film. The gate structure is similar to a MOSFET. It combines the positive characteristics of a MOSFET and bipolar transistor. It is an indispensable component in a power conversion circuit for high-voltage and large-current applications. It is mainly used in consumer equipment such as air conditioners (a/c) or microwave ovens, industrial equipment such as elevators, and inverters for hybrid electric vehicles (HEV) and electric vehicles (EV).

Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.

An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.

It stands for Reverse Blocking Insulated Gate Bipolar Transistor. Reverse-parallel connection of RB-IGBT enables both way switching. It is incorporated in AT-NPC (Advanced T-type Neutral Point Clamped) 3-level inverters, to increase the power conversion efficiency because there are less current passing elements.

It stands for Silicon Carbide. SiC has a wider bandgap width compared to silicon, and is expected to become the next-generation power device material for high-temperature operation, high-speed switching, low power-loss, and high withstand-voltage applications.

A module is a package which contains several power semiconductor devices that form a bridge circuit, etc. A modul provides thermal and electrical contact as well as the electrical insulation maintained between the heat-radiation surface and the electric part. For this reason multiple modules can be placed on the same heat sink. Compared to setups that operate with multiple discrete products, the module can handle a larger current and is superior because it is small, lightweight, and easy to assemble.

It stands for Power Integrated Module. A PIM is a module that is composed of a 3-phase rectifier circuit, 3-phase inverter circuit, and brake circuit. It is also called CIB (Converter Inverter Brake).

It stands for Intelligent Power Module. An IPM is a module product, based on a 3-phase inverter circuit with a control IC that contains a gate driving circuit and other protection circuits. This product makes it easier to design peripheral circuits than conventional IGBT modules with external driver circuits. The following configurations are possible: 7in1 with a brake circuit, and 6in1 without brake circuit.

This is a product that uses a SiC-SBD (Shottky Barrier Diode) as FWD component, with a combination of Si-IGBT. This combination reduces the losses by approximately 25% in comparison with conventional all-silicon chip products. SiC devices are the focus of attention as next-generation semiconductors that offer superior characteristics in areas such as high withstand-voltage, high-temperature, and high-frequency operations.

PIM is a product that integrates a 3-phase converter circuit, brake circuit, and 3-phase inverter circuit into a single module. This leads to a compact main circuit design. IPM, on the other hand, offers an advantage of simple peripheral circuit designing, by use of its built-in control IC. This IC contains gate driving and protection circuits, in addition to brake and inverter circuits.

This product series uses our company's 6th-generation IGBT chip set. This chip generation uses a trench gate structure that forms a three-dimensional gate over the silicon surface. It also contains a field stop structure (FS structure) to improve the characteristic of the element withstand voltage. These technologies made it possible to use a thinner silicon wafer which leads to a lower on-voltage, reduced switching losses, and improved switching speed control, compared to Fuji's 5th generation IGBT (U-series IGBT).

Refer to "Part numbers" in the Semiconductors General Catalog.

Refer to the description of terms in Application Manual Chapter 2-1.

Regarding voltage and current rating, refer to Application Manual Chapter 3-1 on "how to select an IGBT module". Before use, please verify that the voltage, current, temperature, and other factors stay within the maximum rating range. Please contact Fuji Electric Corp. of America or your local sales representative or distributor for support.

Maximum collector-emitter voltage (V_CES) is specified as the maximum rating in the relevant specifications. The voltage should never exceed this value.

The optimum gate resistance value (R_G) varies depending on the circuit configuration or operating environment used. The data sheet describes the recommended resistance value to minimize switching loss. Determine an appropriate gate resistance (R_G) after considering the relevant switching loss, EMC/EMI, surge voltage, and unexpected characteristics such as vibration, without deviating from the descriptions contained in the data sheet.

The gate resistance value (R_G) greatly impacts dv/dt, radiation noise, voltage/current surge, and switching loss. Please comprehensively determine an appropriate value that corresponds to the target figure of your actual design. As for reference, a recommended turn-on resistance value (R_G(on)) is twice or higher than that of the standard value from datasheet, and a recommended turn-off resistance value (R_G(off)) is one to two times that of the standard value.

A surge voltage is generated by high di/dt, and wiring inductance outside the module, at the time of switching (L*di/dt). Some of the ways to suppress this problem are as follows:
(1) Add a protective circuit
(2) Reduce di/dt by adjusting R_G or -V_GE
(3) Reduce inductance by making the main circuit wiring thicker and shorter, and using a copper bar and parallel flat wiring
For details, refer to Application Manual Chapter 5.

"Refer to the data sheet where internal gate resistance (R_G) values for the 6th-generation V-series and 7th-generation X-series IGBT module are described.
Please contact us with a model type number if it is not shown in the 6th-generation data sheet or if it is a product prior to the 6th-generation (U-series, S-series)."

A larger gate resistance (R_G) will increase switching loss, and make it more prone to generating an arm short circuit due to an insufficient dead-time. A smaller gate resistance (R_G)may cause a sudden surge voltage. For details, refer to Application Manual Chapters 2-2.2 and 7-1.3.

Please measure at the main terminal of the product. If a terminal is separately specified for measurement in the data sheet, please use the specified terminal.

An insufficient reverse-bias voltage (-V_GE) between the gate and emitter may cause the IGBT to mis-fire, leading to a short-circuit current. If the current is cut off the surge voltage and the generated loss may damage the product. For details, refer to Application Manual Chapters 4-3.3 and 7-1.2.

Please apply a reverse-bias voltage (-V_GE) of -5 V or higher (-15 V recommended; max. -20 V) between the gate and emitter in the IGBT that is not being used. An insufficient reverse-bias voltage (-V_GE) may cause the IGBT to misfire due to dV/dt at the time of reverse-recovery of the FWD, resulting in damage.
For details, refer to Application Manual Chapter 3-10.

Refer to Application Manual Chapter 7-5. It provides precautions regarding the photo-coupler's noise capability, wiring between the drive circuit and IGBT, and gate overvoltage protection.

The minimum temperature is specified by the storage temperature (T_stg). Please consider that there will be a reduced device withstand voltage and peripheral component (capacitor, control circuit) characteristics under low temperature before use.

Our IPM is designed with a lowest guaranteed operating temperature of T_c=-20^oC. Operation below this temperature has not been evaluated, and any use below -20^oC will void your warranty. At such temperature, there are concerns about possible malfunctions due to a lower device withstand voltage or reduced capacity of the used capacitor.

A lower temperature reduces the IGBT's maximum collector-emitter voltage (V_CES). The data sheet describes the maximum collector-emitter voltage (V_CES) under the condition of T_j=25^oC. Refer to the technical information describing temperature dependency included in the technical documents under Design Support.

Fuji provides a free software to calculate the IGBT losses. The following steps can be followed to obtain the figure.
(1) Download our Loss Simulator
(2) Launch our Loss Simulator
(3) Enter data on the chip series, circuit configuration, voltage rating, and current rating. Select your model type. Click ""Next""
(4) Enter data on the circuit, PWM modulation scheme, and calculation conditions. Click ""Calculate""
(5) The calculation result will be displayed
For details, refer to the user manual.

The IGBT Simulator can estimate the power loss and temperature for a 3-phase 2-level inverter circuit, 3-phase 3-level inverter circuit, and chopper circuit of an IGBT and FWD. It can also calculate loss and temperature under variable inverter operation conditions such as output current and switching frequency. Changes in loss and temperature when the load continuously fluctuates, can also be obtained.

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

Refer to the "Maximum Ratings: Case temperature" section in the data sheet.

Junction temperature can be estimated based on generated losses and thermal resistance R_th(j-c). For details, refer to Application Manual Chapter 6-2.1.
We provide a free software to calculate IGBT's temperature at 2-level inverter, 3-level inverter, and chopper circuits. This software can be downloaded here.

The maximum allowable temperature for the chip during conventional continuous operation is specified in T_j(op). Please ensure the maximum chip temperature stays at or under T_j(op) during conventional continuous operation. The maximum allowable temperature for a chip during short-term overload or abnormal operation is specified inT_j(max).

The following illustrates an example of how to measure case temperature (T_c).
One method is to make a groove on a copper base or a heat sink of an IGBT module to embed a thermocouple. Please fill the groove with highly thermally conductive paste to secure the thermocouple and attain even thermal diffusion.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

No, prior to using an IGBT module, please apply thermal grease (compound) on the surface of a heat sink and module before layering. This will reduce the contact thermal resistance. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Recommended values are 0.92 W/m·K or higher for thermal conductivity, and approximately 100 μm thick after spreading thermal grease. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Refer to Application Manual Chapter 6-3.3 for details.

Thermal grease can be applied using either a roller or stencil mask. An inappropriate thermal grease thickness will negatively affect heat radiation to the heat sink. We strongly recommend using a stencil mask that enables a uniform thickness to be applied over the back surface of the module. For details on application methods, refer to Application Manual Chapter 6-3.3 or Mounting Instruction. An optimum outline drawing for each module is also available. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

While thermal grease promotes thermal conduction to a fin, it has a thermal capacity itself. Applying too much grease will obstruct the heat radiation to fins. At the same time, applying too little will increase the contact thermal resistance because thermal grease will not have good contact in some spots between the fins and module for bonding. For details, refer to Application Manual Chapter 6-3.3 "Thermal paste application" and technical documents.

Guides to flatness values for a heat sink are 50 μm or less for 100 mm between screw mounting locations, and 10 μm or less for surface roughness. An excessive convex warp will cause an insulation breakdown, leading to a critical incident. An excessive concave warp will reduce heat radiation by creating a gap between the product and heat sink, which may lead to thermal destruction.

NTC (Negative Temperature Coefficient Thermistor) is an electronic component whose resistance decreases while the temperature increases.

They are not the same. When incorporating it in an IGBT module, NTC is positioned far from the chip to ensure insulation. This produces a temperature gap between them although NTC's temperature will follow that of chip's T_j.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

I²t is a Joule-integral for overcurrent allowed within the range that does not result in element destruction. Overcurrent is defined in one cycle at commercially restricted half-waves (50, 60 Hz).

The types of power cycle capability include the ΔT_j power cycle (ΔT_j-P/C) capability curve and the ΔT_c power cycle (ΔT_c-P/C) capability curve. We verify device life on two models, therefore please design a product life expectancy within these power cycle capabilities. For details, refer to Application Manual Chapter 11.

In cases where the temperature increases n-times per device operation cycle, we assign a power cycle life expectance count as PC(k=1, 2, 3, ..., n). PC(k) is the power cycle life for the k-th temperature rise. A combined power cycle life expectancy count can be expressed by the formula below.
For details, refer to Application Manual Chapter 11.

IGBT's short-circuit current is impacted by gate-to-emitter voltage V_GE, junction temperature T_j, and switching voltage V_cc. Generally, a short-circuit current increases with a large V_GE, low T_j, and large V_cc.

To prevent a short-circuit in the upper and lower arms, it is necessary to set an on-off timing delay between the several arms. During this time period both devices are switched off. The dead-time needs to be set so that it is generally longer than the switching time of the IGBT (t_off max.).
For details, refer to Application Manual Chapter 7.

One way to determine the validity of the dead-time setting is to verify the current on the direct current power line during non-loading time.
For details, refer to Application Manual Chapter 7.

There is no dependency.

There is no dependency.

There are two types of snubber circuits. The first type is implemented between the DC power supply busbars and is called lump snubber. The second type is called individual snubber ciruit and is connected to each IGBT.
For details, refer to Application Manual Chapter 5.

The necessary capacity for a snubber capacitor can be obtained with the following formula.
For details, refer to Application Manual Chapter 5.

Refer to IGBT module's Application Manual Chapter 6-3 or Mounting Instruction.

Some IGBT module models can be connected in parallel, while other models cannot. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

There are four basic precautions, shown below, when connecting IGBT modules in parallel:
(1) Current unbalance control during steady operation
(2) Current unbalance control at the time of switching
(3) Gate drive circuit
(4) Derating
For details, refer to Application Manual Chapter 4-3.5 and Chapter 8.

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

A simulation model such as a SPICE model is not available.

Product warranty and support are provided if products have been purchased from our distributors or an authorized dealer. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

The desired storage environment has a temperature range of 5 to 35^oC, and humidity range of 45% to 75%. Avoid storage under load, and secure a location with little temperature fluctuation. For details, refer to Application Manual Chapter 3-8.

Avoid soldering under excessive temperature. Soldering condition have to be within specification value. It may result in package degradation. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Some of the ways to prevent misfiring of an IGBT are as follows:
(1) by adding a capacity component C_GE to the area between the gate and emitter
(2) by increasing -V_GE
(3) by increasing gate resistance (R_G)
The effectiveness of these measures will vary depending on the applicable gate circuit, so please verify thoroughly before applying them. For details, refer to Application Manual Chapter 7-1.4.

The piece of black sponge is attached for protection. Please keep the sponge on the module at the time of storage.

You can verify the IGBT by checking the leakage current between G and E, and C and E, using a transistor curve tracer (CT). Simple failure diagnosis can also be done using a voltage, resistance tester in place of a CT. For details, refer to Application Manual Chapter 4-2.

(1) Discharge any static electricity by grounding through a high-capacity resistor, and use a conductive mat that has been grounded
(2) Hold the package body without directly touching the IGBT module terminals (especially control terminal)
(3) Ground tools such as a soldering tip, at an adequately low resistance
(4) Protect a control terminal using conductive material such as IC foam
For details, refer to Application Manual Chapter 3-2.

EMI is an abbreviation of Electro Magnetic Interference. The word describes the negative effect caused on peripheral equipment by an electronic device, and it is also called emission. EMI consists of conductive noise that leaks to a power source, and radiation noise that is emitted as electromagnetic waves. For details, refer to Application Manual Chapter 10.

EMS is an abbreviation of Electro Magnetic Susceptibility. The word describes an electronic device's capability and performance against surrounding interference, and it is also called immunity. It includes evaluation items such as electromagnetic waves, static electricity, and lightning surge. For details, refer to Application Manual Chapter 10.

Fuji Electric Corp. of America began manufacturing IGBTs in 1988, and now has nearly 30 years of history in supplying IGBT products to the market.

Yes. The main factors impacting the IGBT module's life expectancy are temperature gaps involving the element's junction temperature T_j, and increase and decrease of case temperature T_c. Refer to technical documents describing the relationship of ΔT_j and ΔT_c with the device life expectancy.

The first digit represents the year of manufacture, the second digit is the month of manufacture, and the remaining 3 to 4 digits are the lot number.

Pull up the ALM terminal to V_CC to stabilize electric potential.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

Pull up the VinDB terminal to V_CC to stabilize electric potential.

The insulated substrate consists of a ceramic substrate, front-surface copper-foil pattern to create a circuit, and back-surface copper-foil to solder with a copper base. It is designed to electrically insulate between the electric part and the part for thermal dissipation. The ceramic substrate materials used are aluminum oxide, aluminum nitride, silicon nitride, etc.

The switching frequency (carrier frequency) is not defined in specifications. A higher frequency will increase the switching loss, leading to a problem with the junction temperature. The device will be operable under the absolute maximum rated temperature; a frequency of 15 kHz or less should be used for V-series IGBT module. For a welding device or medical equipment it might be necessary to use switching frequencies of 20 kHz or higher, therefore we recommend a high-speed standard 2in1 module or W-series discrete IBGT.

Connectors compatible with V-IPM series terminal shapes (by HIROSE ELECTRIC CO., LTD.) are on the market.
P630: MA49-19S-2.54DSA, MA49-19S-2.54DSA(01)
P631: MDF7-25S-2.54DSA
Please contact HIROSE ELECTRIC CO., LTD. to purchase the relevant connector or verify reliability.

The compatible tab is the 110 series. Please select a tab terminal which has the tab dimensions of 2.8 mm width, and 0.5 mm plate thickness. Relevant products are available on the market from Tyco Electronics Japan G.K., J.S.T. MFG. CO., LTD., and NICHIFU Co., Ltd. Please contact any of these companies for details.

It is a pin type that allows PCB mounting without soldering. It is used in PIM and 6-Pack products. The time required for the assembly process is reduced as connection is completed by pressing an IGBT module over PCB's through-hole and applying pressure from the base side. Special press and press-in tools are required. We do not sell presses or tools.

VDA and VDN use different material for their insulating substrates, resulting in separate thermal resistance values. The VDA type uses aluminum oxide, while the VDN type uses high heat-radiation material, with approximately 30% less thermal resistance than that of VDA. It is effective when achieving a lower T_j max. or longer ΔT_j power cycle life expectancy.

A bootstrap circuit is one that is composed of a control power supply to drive high-side IGBT. It is possible to have a single power supply as it does not require a transformer with multiple secondary windings. Its built-in bootstrap resistance and bootstrap diode (BSD) gives a small IPM to configure a bootstrap circuit simply by adding an external bootstrap capacitor.

IPM V-series input control signal is IGBT-on when set at Low. A small IPM's input control signal is IGBT-on when set at High.

The thermal resistance value may differ even in the same rating, when comparing different families of products made by Fuji Electric or other companies. A low thermal resistance in a certain product may be due to a larger semiconductor chip size, or the use of a ceramic insulating substrate with good thermal conductivity.

1 device represents a value per arm (IGBT+FWD). Some models connect multiple chips per arm in parallel. This parallel-chip configuration is counted as one chip.

It represents an external resistance. It excludes the module's built-in R_G(int).

RBSOA is an abbreviation of Reverse Bias Safety Operating Area. The data sheet contains a characteristic graph describing double the rated voltage and rated current under the condition of maximum continuous operation temperature T_j(op). It illustrates a range of V_CE and I_C where safe operation is maintained when IGBT is turning off. The operation can be repeated within the RBSOA range.

SCSOA is an abbreviation of Short Circuit Safety Operating Area. During an incident with an inverter device, such as a load short-circuit, arm short-circuit, or ground fault, a current that is several times higher than the rated current flows in the IGBT. SCSOA is provided to protect the IGBT even during these instances. SCSOA has different characteristics depending on the generation or withstand voltage of IGBT. Refer to the technical documents of individual models.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

There are two types of noise: conductive noise (noise terminal voltage) and radiation noise. Conductive noise propagates over a conductor or earth wire in a main circuit. It is divided into two groups: normal mode and common mode. Radiation noise is generated within a device and emitted into the air because the device wiring or casing works as an antenna. For details, refer to IGBT's Application Manual Chapter 10.

"Conductive noise can be reduced through methods such as adding an LC filter on the AC power side, adding a ferrite core, or adjusting the gate resistance to suppress dv/dt at the time of switching.
For details, refer to IGBT's Application Manual Chapter 10."

Radiation noise can be reduced through methods such as reducing the loop current area where noise is generated, or adjusting the gate resistance. For details, refer to IGBT's Application Manual Chapter 10.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

A stencil mask is a 200 μm-thick, metal plate with multiple holes punched in the compound application area. A compound can be applied with a uniform thickness of 100 μm when clamping the stencil to a heat sink after application. We do not sell stencil masks but we can provide a mask drawing that corresponds to the relevant package.

It will cause a separation of aluminum wire, or a crack in the solder under the chip. Thermal destruction will result from the current concentrating on the relevant part of the chip, or increased thermal resistance.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

The junction temperature Tvj doesn't increase immediately when power losses are generated on a semiconductor chip. There is a time delay due to thermal capacity of materials composing the IGBT module. The equation in the data sheet shows the relationship of the transient thermal resistance to the pulse width t_w when a single square wave pulse (power loss) is applied. Transient temperature rise of the junction ΔT_(j-c) can be obtained from the transient thermal resistance.

The average value of diode losses in the converter circuit is obtained from the formula below.

Major circuit configurations of 3-level inverters can be categorized in 2 groups, I-type and T-type as shown in the figure below. Fuji Electric has commercialized a T-type which applies two Reverse Blocking IGBTs (RB-IGBT) as a bi-directional switch. The loss can be made smaller compared with the conventional T-type where diode is connected in series with IGBT.

If the stray inductance L_s of the main circuit is small, V_CE voltage drop (ΔV=-L_Sx di/dt) becomes small and E_on becomes large.

For dimensions which are not described in the outline drawing, please contact Fuji Electric Corp. of America or your local sales representative or distributor.

For hybrid SiC modules, the same thermal grease used for conventional all-silicon chip IGBT module can also be used.

"Fuji has released products with 2500 V isolation voltage (V-IPM, R-IPM) for general industrial application and Small IPMs with 1500 V isolation voltage for air conditioners. The IPMs for general industrial application have a good heat spread characteristic thanks to a copper base plate, and they have protection functions with on chip temperature and current sensors. They are used for servo systems, robots, elevators, etc.

Small IPMs, on the other hand, have a compatible package to other industry-standard package, and offer an advantage of simple peripheral circuit designing thanks to built-in level-shift circuits with high withstand voltage and bootstrap diode."

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

The short-circuit withstand capability varies with chip generation and withstand voltage. Technical documents that show the relation of the short-circuit withstand capability t_SC as a function of DC voltage V_CC are available. Please download them from our web site.

In the case of excess current due to an accident or abnormal operation of an inverter device, the time from the start of the short-circuit current until the IGBT breakdown is called the short-circuit withstand capability. The protection circuit has to be designed to detect excess current in a short time not exceeding the short-circuit time and to turn off the gate pulse.

For each pin 50 A is the maximum.

They are the same.

"(1) Low power dissipation
Compared with Fuji's conventional products (the 6th Generation V Series), power loss during inverter operation is reduced by 10%.
(2) Miniaturization
By suppressing heat generation together with power loss reduction, miniaturization of about 36% is achieved compared with conventional products.
(3) High temperature operation and high reliability
Implementation of continuous operation at the maximum junction temperature T_vjop of 175^oC, and improvement of reliability.
For details, please refer to 7th Generation IGBT Module "X Series" New Product Information."

"Let's consider the case where two IGBTs with different V_CEsat are connected in parallel.
(1) A larger amount of the current will flow through the IGBT with smaller V_CEsat.
(2) Due to the larger current flow, the total loss of the IGBT becomes large and the junction temperature increase.
(3) If the IGBT has a positive temperature coefficient, V_CEsat increases with increasing junction temperature T_vj and hence, the current will decrease until current balance is achieved."

The data sheets can be downloaded from Fuji Electric web site. The use of parametric search is recommended. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

They have almost no frequency dependence in the range of f=1k - 1MHz.

Please refer to the Technical Document of "Carrier frequency dependency of control power supply consumption current".

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please refer to Chapter 4.2 of Application Manual.

RC-IGBT is an acronym of "Reverse Conducting Insulated Gate Bipolar Transistor". The RC chip combines both, IGBT and FWD, in one single chip. It has excellent heat dissipation due to alternating operation of IGBT and FWD as well as reduced number of chips promise miniaturization and high reliability of the IGBT module.

"To prevent a short-circuit in the upper and lower arms, it is necessary to set an on-off timing delay between the different arms. During the so called 'dead time' period both devices are switched off.
For details, refer to Chapter 7.3 of IGBT Module Application Manual."

When a motor stops, the brake IGBT is used to convert kinetic energy of the motor into electric energy and to consume the energy as heat of a resistor (damping resistor). Deceleration time of the motor can be reduced when using a damping resistor. Make sure that the DC voltage does not increase too much with the regenerated energy and exceed the breakdown voltage of the electrolytic capacitor.

A board for characteristic evaluation of the module is available. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please refer to the Mounting Instruction.

Power cycle capability is the capability of the module to withstand repeated heating and cooling. The case temperature T_c will goes up and down until the modules fails: Stress strain is generated between the metal base plate and the insulating substrate causing fatigue in the solder under the insulating substrate. Refer to technical documents describing the relation of ΔT_c and the expectancy of life of the device.

A range between -5V and -15V is recommended. With lower -V_GE, the turn-off time t_off becomes large and the turn-off loss E_off increases. Additionally, the IGBT may misfire and cause a short-circuit current flow.

ΔT_j power cycle breakdown mode will become solder degradation mode in the operation with large temperature variation and wire peeling mode in the operation with relatively small temperature variation. Additionally, the transition from plastic to elastic behavior occurs at around 50^oC, which causes an inflection point in the curve.

They are almost proportional. The switching loss increases as the DC voltage becomes higher.

In operations where the junction temperature T_vj of a semiconductor chip changes, thermal stress is generated between the materials of the power module. Fatigue will be accumulated from repeated thermal stress, leading to breakdown in the end. Increasing temperature change ΔT_vj, leads to a reduction in the lifetime of the power module. It is called as the power cycle capability ΔT_vj.

It is not recommended.

Yes, it is possible.

Similar to an IGBT, the FWD has a SOA (Safty Operating Area). Please refer to the following graph which is also shown in the product specifications. It displays an area that indicates the maximum allowed power P_max. Since P_max is the product of the voltage V_AK applied during reverse recovery and the forward current I_F, it limits these two parameters. The design should take into account the SOA and assures that the locus V_AK-I_F stays within the SOA. If power, exceeding P_max, is applied, FWD may be damaged. In that case, take countermeasures like increasing the gate resistance of the IGBT ON-side, or using a snubber circuit to suppress the surge voltage.

"Please solder the pins within "Soldering Heat-Resistance Test Conditions" specified in the reliability test items in the specifications.
Please confirm the actual terminal temperature by using a thermocouple."

These are only exemplary temperatures. If they are not suitable for your application, use the curve that gives the shortest lifetime for your design.

Please do not connect that terminal to anything. It does not have any electrical connection to the IGBT module.

For a voltage boosting circuit, we can offer chopper modules with an IGBT in the low arm side. For step-up/down converter a 2in1 module with 2 IGBTs in series would be suitable. If only one of the two IGBTs is used, please short-circuit gate and emitter of the other one to avoid misfiring.

Yes, it is possible to use a 2in1 module in a chopper circuit and use only one of the two IGBTs. To avoid misfiring, please carefully short-circuit gate and the emitter of the unused IGBT.

No. The dead time indicates the dead time on IPM input terminal Vin.

If diode loss increases, check that the diode temperature does not exceed the absolute maximum ratings, and that ΔT_vj power cycle capacity is satisfied. Also check that the system will not be broken due to inrush current at power-on or temporary interruption of power.

The alarm output period t_FO is minimum 20μs, but typical value is about 50μs. The typical value, however, is not guaranteed.

Fuji recommends the paste 'G776'. Please contact Shin-Etsu Chemical for details. However, Fuji Electric does not guarantee its characteristics when combined with IGBT module.

It is ±10%. However, it is not guaranteed.

The temperature of LVIC (low voltage IC for low arm IGBT drive) is detected. It is not the junction temperature of the IGBT.

IGBT gate drive ICs are supplied from many companies including BROADCOM, Renesas Electronics, Texas Instruments, ISAHAYA ELECTRONICS and TOSHIBA. As the ICs contain short-circuit protection and voltage drop protection circuits within the chip, design of the drive circuit will be simplified. An IGBT module evaluation board with mounted drive IC is available. Please download the information and use it for your reference. However, Fuji Electric does not guarantee its characteristics when combined with an IGBT module.

It is a protection circuit, added to suppress a surge voltage between the collector and the emitter.

Short-circuit all main and control terminals and apply a specified AC voltage between all terminals and the backside metal area for a specified time period.

"Including the V Series, -I_C represents the maximum DC forward current which is allowed for the built-in diode, and -I_{c, pulse} represents the maximum pulse forward current which is allowed for the built-in diode.
From X Series on, to be easily recognized as compliant to IEC standards and as diode elements, they have been changed to I_F and I_FRM."

"CTI is the abbreviation for "Comparative Tracking Index".
Those with the comparative tracking index, that indicates tracking resistance as a molding resin, in the material group I in the table are required. The resin molding of power modules used in harsh environment, such as for solar panel generation and wind power generation, improvement in tracking resistance is mandatory. "

There are several snubber capacitors with different withstand voltages and capacitances which meet the main terminal pitch. Please contact RUBYCON CORPORATION.

"M***: IGBT module product
P***: IPM product"

The simulator is based on data obtained by measurement results. The measured values are within the range of representative characteristics described in each data sheet. Input of conditions that are away from actual measurement range will create an error.

Since the TjOH protection and the UVLO protection are independent from input signals, an alarm signal will be issued when overheat or power supply voltage drop occurs. For Short Circuit (SC) and Over Current (OC) protection will be activated when the input signal is IGBT ON (V_in: Low Level).

It will be reset automatically. After the alarm output period t_FO elapsed and the cause of failure has been removed, the protection will reset automatically.

"V_CEsat and V_F of the terminal are ON voltages measured on the main terminals and include voltages induced on the internal wiring of the module. Use them as a reference when On voltage is measured on the terminal.
On the other hand, V_CEsat and V_F characteristics of the chip indicate IN voltage closest to the semiconductor chip. To obtain the conduction loss that occurs in IGBT and FWD, calculate it from the ON voltage value of the chip."

The color is not important from technical point of view. All elder modules including the 5th generation module (U Series) are black. Starting with the 6th generation module (V Series) a natural color (beige) is used to easyly identify the RoHS compliant modules.

"The resistance of the main current wiring in the module can be calculated from the values of V_CEsat and V_F of the terminal and the chip shown in the data sheet.
Example: 2MBI600XNE120-50 (T_vj=25^oC, Ic=600A)
V_CEsat (terminal) = 2.20V, V_CEsat (chip)=1.45V
Internal wiring resistance R_int = (2.20V-1.45V)/600A=1.25mΩ
Please contact us for the value of internal wiring inductance.
"

Values of I²t and I_FSM described in the specification/data sheet shall be the guaranteed value for the half-sine 10ms surge current waveform. For I²t and I_FSM for other wavefrom or condition, please contact us.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

IPMs do not have a dead time setting function. Please set an adequate dead time in the gate signal input from the outside.

The value of Q_G does only slightly depend on power supply voltage, current and temperature, hence it is not necessary to consider this dependency in real application.

Fuji recommends a dead time larger than 3 μs for IGBT module. For IPMs dead time should be larger than 1 μs.

The accuracy does not change. The TEMP output voltage shows clamping characteristics at room temperature or below. Please attach a pull-down resistor, if linearity of the output voltage is required for temperatures below room temperature.

The TEMP terminal can directly be connected to the MPU.

It is an anolog signal.

"In these two different module types different chips are used.
E-type: Standard type
P-type: Soft switching type suppressing turn-off surge voltage"

If the turn-off breaking current increases, di/dt increases as well and is causing an induced electromotive force L·di/dt due to the internal inductance in the module L. Hence, high voltage will be applied to the IGBT chip and might cause some avalanche breakdown. Therefore maximum voltage needs to be reduced when the current increases.

Short circuit withstand capability in the datasheets for our modules are defined in DC short circuit condition (arm short circuit). In the case of load short circuit, the short circuit occurs during conducting mode of the IGBT, and the larger current than the saturation current may flow into the device.

IGBTs developed in recent years are designed to not cause latch-up within a range of normal usage.

It varies depending on conditions such as internal structure of the module, thermal grease and cooling fins. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

IGBT module do not have a specification of the FBSOA. For IGBT modules the SOA of the FWD is given in the datasheets.

IPM contains electronic parts such as PCBs, ICs and capacitors. Therefore, it has a narrower temperature range compared to regular IGBT modules.

This is not problematic. Small IPM modules already contain bootstrap diodes and a limiting resistor inside.

If voltage is applied between C-E while the gate is open, the divided voltage by C_res and C_ies is applied to the gate, as well. This may lead to a gate breakdown from overvoltage, or a breakdown by heating from elevated device temperature due to a unstable ON state of the gate. As such, for the inverter circuit, the sequence where voltage between C-E is applied after gate circuit is established is recommended. Even if this sequence is not set up, a resistor inserted between G-E to stabilize the gate potential will help to avoid this breakdown phenomenon. In that case, a resistance of about 10kΩ against open (infinite resistance) is recommended. If the resistance is too small, you will see problems such as lower gate voltage than the designed value and an increased current consumption in the drive circuit (because the gate voltage will be the one divided with gate resistance R_G.) Therefore, a resistance sufficiently low against the open value is enough and you don’t need to change it according to the current rating of the device.

The Safe Operation Area (SOA) of a diode indicates the area where the maximum power determined by a product of the current and voltage applied during reverse recovery can be allowed. This maximum power is called as P_max.

The big benefit of using RB IGBT is that the number of elements that the current goes through is smaller compared with the conventional methods. This leads to a reduction of conductance losses.

Its maximum rated terminal temperature is 125^oC. However, the allowable maximum terminal temperature of Fuji PrimePACK ^TM is 150^oC.

Mainly the turn-off loss E_off will be affected. As -V_GE increases, E_off decreases.

The breakdown mode of an element may include overcurrent, overvoltage, overheat, etc. Causes of each breakdown mode have to be investigated. In the real world, however, it is difficult to identify the cause by the breakdown status of an IGBT module alone. It is important to consolidate information such as the breakdown voltage V_CE, current I_C, gate voltage V_GE, and to make comprehensive investigations. For details, refer to the Application Manual.

A 3-Level inverter realizes system miniaturization and higher efficiency compared to a 2-level inverter. A 2-Level inverter controls the voltage waveform of the converter output with 2 electric potentials while a 3-level inverter controls it with 3 electric potentials. As the 3-level converter creates an output waveform closer to a sinusoidal curve, a reduction of LC filter size and switching loss is expected.

There no problem in cutting pins. But please be careful not to apply stress to the PCB.

Follow the recommended circuit for the driver IC. Detemine the circuit constants so that the protection operation will be finished within the period of the short-circuit time indicated for each series.

As short-circuit current is determined by the gate voltage, the SCSOA has to be judged by the gate voltage at the time of a short circuit. As the gate voltage may go up in some cases at the time of short circuit, investigation under the worst conditions is recommended.

There is a temperature difference between the surface temperature and the backside temperature. The latter becomes higher.

It is not an average value across the copper base plate. It is the case temperature directly under the chip.

The case side temperature and the case temperature T_c are different. Heat of a semiconductor chip is conducted through an insulating substrate to the copper base and heatsink. The case side temperature becomes considerably low, compared with T_c.

The temperature of the NTC thermistor and the case temperature are different. Generally speaking, the case temperature T_c directly under the chip becomes higher than the temperature of the NTC thermistor.

The temperature of the NTC thermistor and the junction temperature T_vj are different. The junction temperature T_vj becomes higher than the temperature of the NTC thermistor. The thermistor is mounted on the same insulating substrate as the IGBT chip but is away from the IGBT chip. It follows the junction temperature T_vj with an offset in time.

The temperature of the NTC thermistor and the heatsink temperature T_s are different.

They are the same. Refer to the Data sheet of each type for resistance value and B constant.

If roller and/or spatula is used to apply thermal grease, the amount of application may vary or it is impossible to coat the grease evenly. Therefore, those tools are not recommended. Instead, we strongly recommend an application of the grease using stencil masks (See Q40).

When you estimate the junction temperature T_vj, please use the chip characteristic data for the calculation.

Please contact HIROSE ELECTRIC. CO., LTD.

The benefits are the negligible small diode losses of the SiC diodes. In the following two comparative examples are given for an all-silicon device and a hybrid device with 1200V/300A rating.
(1) If both modules have a fixed output current I_o=212Arms and the switching frequency of the hybrid module is raised to 1.5 times of the all-silicon one, they still have similar losses.
(2) If both modules have a fixed switching frequency f_sw=16kHz and the output current of the hybrid module is raised to 1.2 times of the all-silicon device, they still have similar losses.

They are used in industrial inverters, auxiliary inverters for equipment in the Shinkansen cars, high capacity UPS, electric power storage system, etc.

Yes, it is available on the web site. Please download the data from the link below.

Yes. If the gate voltage V_GE is high, short-circuit current I_SC will increase, and short-circuit withstand time t_SC will become shorter.

The calculation can be done by using the Fuji IGBT Simulator which you find on the webpage.

The trade-off relationship of an IGBT describes the relation between ON-state conduction losses, switching losses and short circuit withstand capability. An IGBT can be optimized for either one. For example, when reducing the conduction losses, the switching losses will increase and the short circuit withstand capability decrease.

It stands for Insulated Gate Bipolar Transistor. It is a voltage-controlled device that has an insulated gate with an oxide insulating film. The gate structure is similar to a MOSFET. It combines the positive characteristics of a MOSFET and bipolar transistor. It is an indispensable component in a power conversion circuit for high-voltage and large-current applications. It is mainly used in consumer equipment such as air conditioners (a/c) or microwave ovens, industrial equipment such as elevators, and inverters for hybrid electric vehicles (HEV) and electric vehicles (EV).

Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.

It stands for Reverse Blocking Insulated Gate Bipolar Transistor. Reverse-parallel connection of RB-IGBT enables both way switching. It is incorporated in AT-NPC (Advanced T-type Neutral Point Clamped) 3-level inverters, to increase the power conversion efficiency because there are less current passing elements.

Refer to "Part numbers" in the Semiconductors General Catalog.

Maximum collector-emitter voltage (V_CES) is specified as the maximum rating in the relevant specifications. The voltage should never exceed this value.

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

You can verify the IGBT by checking the leakage current between G and E, and C and E, using a transistor curve tracer (CT). Simple failure diagnosis can also be done using a voltage, resistance tester in place of a CT. For details, refer to Application Manual Chapter 4-2.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

The switching frequency (carrier frequency) is not defined in specifications. A higher frequency will increase the switching loss, leading to a problem with the junction temperature. The device will be operable under the absolute maximum rated temperature; a frequency of 15 kHz or less should be used for V-series IGBT module. For a welding device or medical equipment it might be necessary to use switching frequencies of 20 kHz or higher, therefore we recommend a high-speed standard 2in1 module or W-series discrete IBGT.

There are two types of noise: conductive noise (noise terminal voltage) and radiation noise. Conductive noise propagates over a conductor or earth wire in a main circuit. It is divided into two groups: normal mode and common mode. Radiation noise is generated within a device and emitted into the air because the device wiring or casing works as an antenna. For details, refer to IGBT's Application Manual Chapter 10.

"Conductive noise can be reduced through methods such as adding an LC filter on the AC power side, adding a ferrite core, or adjusting the gate resistance to suppress dv/dt at the time of switching.
For details, refer to IGBT's Application Manual Chapter 10."

Radiation noise can be reduced through methods such as reducing the loop current area where noise is generated, or adjusting the gate resistance. For details, refer to IGBT's Application Manual Chapter 10.

"Let's consider the case where two IGBTs with different V_CEsat are connected in parallel.
(1) A larger amount of the current will flow through the IGBT with smaller V_CEsat.
(2) Due to the larger current flow, the total loss of the IGBT becomes large and the junction temperature increase.
(3) If the IGBT has a positive temperature coefficient, V_CEsat increases with increasing junction temperature T_vj and hence, the current will decrease until current balance is achieved."

The data sheets can be downloaded from Fuji Electric web site. The use of parametric search is recommended. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

"To prevent a short-circuit in the upper and lower arms, it is necessary to set an on-off timing delay between the different arms. During the so called 'dead time' period both devices are switched off.
For details, refer to Chapter 7.3 of IGBT Module Application Manual."

It stands for Insulated Gate Bipolar Transistor. It is a voltage-controlled device that has an insulated gate with an oxide insulating film. The gate structure is similar to a MOSFET. It combines the positive characteristics of a MOSFET and bipolar transistor. It is an indispensable component in a power conversion circuit for high-voltage and large-current applications. It is mainly used in consumer equipment such as air conditioners (a/c) or microwave ovens, industrial equipment such as elevators, and inverters for hybrid electric vehicles (HEV) and electric vehicles (EV).

Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.

It stands for Reverse Blocking Insulated Gate Bipolar Transistor. Reverse-parallel connection of RB-IGBT enables both way switching. It is incorporated in AT-NPC (Advanced T-type Neutral Point Clamped) 3-level inverters, to increase the power conversion efficiency because there are less current passing elements.

A module is a package which contains several power semiconductor devices that form a bridge circuit, etc. A modul provides thermal and electrical contact as well as the electrical insulation maintained between the heat-radiation surface and the electric part. For this reason multiple modules can be placed on the same heat sink. Compared to setups that operate with multiple discrete products, the module can handle a larger current and is superior because it is small, lightweight, and easy to assemble.

It stands for Power Integrated Module. A PIM is a module that is composed of a 3-phase rectifier circuit, 3-phase inverter circuit, and brake circuit. It is also called CIB (Converter Inverter Brake).

It stands for Intelligent Power Module. An IPM is a module product, based on a 3-phase inverter circuit with a control IC that contains a gate driving circuit and other protection circuits. This product makes it easier to design peripheral circuits than conventional IGBT modules with external driver circuits. The following configurations are possible: 7in1 with a brake circuit, and 6in1 without brake circuit.

This is a product that uses a SiC-SBD (Shottky Barrier Diode) as FWD component, with a combination of Si-IGBT. This combination reduces the losses by approximately 25% in comparison with conventional all-silicon chip products. SiC devices are the focus of attention as next-generation semiconductors that offer superior characteristics in areas such as high withstand-voltage, high-temperature, and high-frequency operations.

PIM is a product that integrates a 3-phase converter circuit, brake circuit, and 3-phase inverter circuit into a single module. This leads to a compact main circuit design. IPM, on the other hand, offers an advantage of simple peripheral circuit designing, by use of its built-in control IC. This IC contains gate driving and protection circuits, in addition to brake and inverter circuits.

This product series uses our company's 6th-generation IGBT chip set. This chip generation uses a trench gate structure that forms a three-dimensional gate over the silicon surface. It also contains a field stop structure (FS structure) to improve the characteristic of the element withstand voltage. These technologies made it possible to use a thinner silicon wafer which leads to a lower on-voltage, reduced switching losses, and improved switching speed control, compared to Fuji's 5th generation IGBT (U-series IGBT).

Refer to "Part numbers" in the Semiconductors General Catalog.

Refer to the description of terms in Application Manual Chapter 2-1.

Regarding voltage and current rating, refer to Application Manual Chapter 3-1 on "how to select an IGBT module". Before use, please verify that the voltage, current, temperature, and other factors stay within the maximum rating range. Please contact Fuji Electric Corp. of America or your local sales representative or distributor for support.

Maximum collector-emitter voltage (V_CES) is specified as the maximum rating in the relevant specifications. The voltage should never exceed this value.

The optimum gate resistance value (R_G) varies depending on the circuit configuration or operating environment used. The data sheet describes the recommended resistance value to minimize switching loss. Determine an appropriate gate resistance (R_G) after considering the relevant switching loss, EMC/EMI, surge voltage, and unexpected characteristics such as vibration, without deviating from the descriptions contained in the data sheet.

The gate resistance value (R_G) greatly impacts dv/dt, radiation noise, voltage/current surge, and switching loss. Please comprehensively determine an appropriate value that corresponds to the target figure of your actual design. As for reference, a recommended turn-on resistance value (R_G(on)) is twice or higher than that of the standard value from datasheet, and a recommended turn-off resistance value (R_G(off)) is one to two times that of the standard value.

A surge voltage is generated by high di/dt, and wiring inductance outside the module, at the time of switching (L*di/dt). Some of the ways to suppress this problem are as follows:
(1) Add a protective circuit
(2) Reduce di/dt by adjusting R_G or -V_GE
(3) Reduce inductance by making the main circuit wiring thicker and shorter, and using a copper bar and parallel flat wiring
For details, refer to Application Manual Chapter 5.

"Refer to the data sheet where internal gate resistance (R_G) values for the 6th-generation V-series and 7th-generation X-series IGBT module are described.
Please contact us with a model type number if it is not shown in the 6th-generation data sheet or if it is a product prior to the 6th-generation (U-series, S-series)."

A larger gate resistance (R_G) will increase switching loss, and make it more prone to generating an arm short circuit due to an insufficient dead-time. A smaller gate resistance (R_G)may cause a sudden surge voltage. For details, refer to Application Manual Chapters 2-2.2 and 7-1.3.

Please measure at the main terminal of the product. If a terminal is separately specified for measurement in the data sheet, please use the specified terminal.

An insufficient reverse-bias voltage (-V_GE) between the gate and emitter may cause the IGBT to mis-fire, leading to a short-circuit current. If the current is cut off the surge voltage and the generated loss may damage the product. For details, refer to Application Manual Chapters 4-3.3 and 7-1.2.

Please apply a reverse-bias voltage (-V_GE) of -5 V or higher (-15 V recommended; max. -20 V) between the gate and emitter in the IGBT that is not being used. An insufficient reverse-bias voltage (-V_GE) may cause the IGBT to misfire due to dV/dt at the time of reverse-recovery of the FWD, resulting in damage.
For details, refer to Application Manual Chapter 3-10.

Refer to Application Manual Chapter 7-5. It provides precautions regarding the photo-coupler's noise capability, wiring between the drive circuit and IGBT, and gate overvoltage protection.

The minimum temperature is specified by the storage temperature (T_stg). Please consider that there will be a reduced device withstand voltage and peripheral component (capacitor, control circuit) characteristics under low temperature before use.

Our IPM is designed with a lowest guaranteed operating temperature of T_c=-20^oC. Operation below this temperature has not been evaluated, and any use below -20^oC will void your warranty. At such temperature, there are concerns about possible malfunctions due to a lower device withstand voltage or reduced capacity of the used capacitor.

A lower temperature reduces the IGBT's maximum collector-emitter voltage (V_CES). The data sheet describes the maximum collector-emitter voltage (V_CES) under the condition of T_j=25^oC. Refer to the technical information describing temperature dependency included in the technical documents under Design Support.

Fuji provides a free software to calculate the IGBT losses. The following steps can be followed to obtain the figure.
(1) Download our Loss Simulator
(2) Launch our Loss Simulator
(3) Enter data on the chip series, circuit configuration, voltage rating, and current rating. Select your model type. Click ""Next""
(4) Enter data on the circuit, PWM modulation scheme, and calculation conditions. Click ""Calculate""
(5) The calculation result will be displayed
For details, refer to the user manual.

The IGBT Simulator can estimate the power loss and temperature for a 3-phase 2-level inverter circuit, 3-phase 3-level inverter circuit, and chopper circuit of an IGBT and FWD. It can also calculate loss and temperature under variable inverter operation conditions such as output current and switching frequency. Changes in loss and temperature when the load continuously fluctuates, can also be obtained.

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

Refer to the "Maximum Ratings: Case temperature" section in the data sheet.

Junction temperature can be estimated based on generated losses and thermal resistance R_th(j-c). For details, refer to Application Manual Chapter 6-2.1.
We provide a free software to calculate IGBT's temperature at 2-level inverter, 3-level inverter, and chopper circuits. This software can be downloaded here.

The maximum allowable temperature for the chip during conventional continuous operation is specified in T_j(op). Please ensure the maximum chip temperature stays at or under T_j(op) during conventional continuous operation. The maximum allowable temperature for a chip during short-term overload or abnormal operation is specified inT_j(max).

The following illustrates an example of how to measure case temperature (T_c).
One method is to make a groove on a copper base or a heat sink of an IGBT module to embed a thermocouple. Please fill the groove with highly thermally conductive paste to secure the thermocouple and attain even thermal diffusion.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

No, prior to using an IGBT module, please apply thermal grease (compound) on the surface of a heat sink and module before layering. This will reduce the contact thermal resistance. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Recommended values are 0.92 W/m·K or higher for thermal conductivity, and approximately 100 μm thick after spreading thermal grease. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Refer to Application Manual Chapter 6-3.3 for details.

Thermal grease can be applied using either a roller or stencil mask. An inappropriate thermal grease thickness will negatively affect heat radiation to the heat sink. We strongly recommend using a stencil mask that enables a uniform thickness to be applied over the back surface of the module. For details on application methods, refer to Application Manual Chapter 6-3.3 or Mounting Instruction. An optimum outline drawing for each module is also available. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

While thermal grease promotes thermal conduction to a fin, it has a thermal capacity itself. Applying too much grease will obstruct the heat radiation to fins. At the same time, applying too little will increase the contact thermal resistance because thermal grease will not have good contact in some spots between the fins and module for bonding. For details, refer to Application Manual Chapter 6-3.3 "Thermal paste application" and technical documents.

Guides to flatness values for a heat sink are 50 μm or less for 100 mm between screw mounting locations, and 10 μm or less for surface roughness. An excessive convex warp will cause an insulation breakdown, leading to a critical incident. An excessive concave warp will reduce heat radiation by creating a gap between the product and heat sink, which may lead to thermal destruction.

NTC (Negative Temperature Coefficient Thermistor) is an electronic component whose resistance decreases while the temperature increases.

They are not the same. When incorporating it in an IGBT module, NTC is positioned far from the chip to ensure insulation. This produces a temperature gap between them although NTC's temperature will follow that of chip's T_j.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

I²t is a Joule-integral for overcurrent allowed within the range that does not result in element destruction. Overcurrent is defined in one cycle at commercially restricted half-waves (50, 60 Hz).

The types of power cycle capability include the ΔT_j power cycle (ΔT_j-P/C) capability curve and the ΔT_c power cycle (ΔT_c-P/C) capability curve. We verify device life on two models, therefore please design a product life expectancy within these power cycle capabilities. For details, refer to Application Manual Chapter 11.

In cases where the temperature increases n-times per device operation cycle, we assign a power cycle life expectance count as PC(k=1, 2, 3, ..., n). PC(k) is the power cycle life for the k-th temperature rise. A combined power cycle life expectancy count can be expressed by the formula below.
For details, refer to Application Manual Chapter 11.

IGBT's short-circuit current is impacted by gate-to-emitter voltage V_GE, junction temperature T_j, and switching voltage V_cc. Generally, a short-circuit current increases with a large V_GE, low T_j, and large V_cc.

To prevent a short-circuit in the upper and lower arms, it is necessary to set an on-off timing delay between the several arms. During this time period both devices are switched off. The dead-time needs to be set so that it is generally longer than the switching time of the IGBT (t_off max.).
For details, refer to Application Manual Chapter 7.

One way to determine the validity of the dead-time setting is to verify the current on the direct current power line during non-loading time.
For details, refer to Application Manual Chapter 7.

There is no dependency.

There is no dependency.

There are two types of snubber circuits. The first type is implemented between the DC power supply busbars and is called lump snubber. The second type is called individual snubber ciruit and is connected to each IGBT.
For details, refer to Application Manual Chapter 5.

The necessary capacity for a snubber capacitor can be obtained with the following formula.
For details, refer to Application Manual Chapter 5.

Refer to IGBT module's Application Manual Chapter 6-3 or Mounting Instruction.

Some IGBT module models can be connected in parallel, while other models cannot. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

There are four basic precautions, shown below, when connecting IGBT modules in parallel:
(1) Current unbalance control during steady operation
(2) Current unbalance control at the time of switching
(3) Gate drive circuit
(4) Derating
For details, refer to Application Manual Chapter 4-3.5 and Chapter 8.

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

A simulation model such as a SPICE model is not available.

Product warranty and support are provided if products have been purchased from our distributors or an authorized dealer. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

The desired storage environment has a temperature range of 5 to 35^oC, and humidity range of 45% to 75%. Avoid storage under load, and secure a location with little temperature fluctuation. For details, refer to Application Manual Chapter 3-8.

Avoid soldering under excessive temperature. Soldering condition have to be within specification value. It may result in package degradation. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Some of the ways to prevent misfiring of an IGBT are as follows:
(1) by adding a capacity component C_GE to the area between the gate and emitter
(2) by increasing -V_GE
(3) by increasing gate resistance (R_G)
The effectiveness of these measures will vary depending on the applicable gate circuit, so please verify thoroughly before applying them. For details, refer to Application Manual Chapter 7-1.4.

The piece of black sponge is attached for protection. Please keep the sponge on the module at the time of storage.

You can verify the IGBT by checking the leakage current between G and E, and C and E, using a transistor curve tracer (CT). Simple failure diagnosis can also be done using a voltage, resistance tester in place of a CT. For details, refer to Application Manual Chapter 4-2.

(1) Discharge any static electricity by grounding through a high-capacity resistor, and use a conductive mat that has been grounded
(2) Hold the package body without directly touching the IGBT module terminals (especially control terminal)
(3) Ground tools such as a soldering tip, at an adequately low resistance
(4) Protect a control terminal using conductive material such as IC foam
For details, refer to Application Manual Chapter 3-2.

EMI is an abbreviation of Electro Magnetic Interference. The word describes the negative effect caused on peripheral equipment by an electronic device, and it is also called emission. EMI consists of conductive noise that leaks to a power source, and radiation noise that is emitted as electromagnetic waves. For details, refer to Application Manual Chapter 10.

EMS is an abbreviation of Electro Magnetic Susceptibility. The word describes an electronic device's capability and performance against surrounding interference, and it is also called immunity. It includes evaluation items such as electromagnetic waves, static electricity, and lightning surge. For details, refer to Application Manual Chapter 10.

Fuji Electric Corp. of America began manufacturing IGBTs in 1988, and now has nearly 30 years of history in supplying IGBT products to the market.

Yes. The main factors impacting the IGBT module's life expectancy are temperature gaps involving the element's junction temperature T_j, and increase and decrease of case temperature T_c. Refer to technical documents describing the relationship of ΔT_j and ΔT_c with the device life expectancy.

The first digit represents the year of manufacture, the second digit is the month of manufacture, and the remaining 3 to 4 digits are the lot number.

Pull up the ALM terminal to V_CC to stabilize electric potential.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

Pull up the VinDB terminal to V_CC to stabilize electric potential.

The insulated substrate consists of a ceramic substrate, front-surface copper-foil pattern to create a circuit, and back-surface copper-foil to solder with a copper base. It is designed to electrically insulate between the electric part and the part for thermal dissipation. The ceramic substrate materials used are aluminum oxide, aluminum nitride, silicon nitride, etc.

The switching frequency (carrier frequency) is not defined in specifications. A higher frequency will increase the switching loss, leading to a problem with the junction temperature. The device will be operable under the absolute maximum rated temperature; a frequency of 15 kHz or less should be used for V-series IGBT module. For a welding device or medical equipment it might be necessary to use switching frequencies of 20 kHz or higher, therefore we recommend a high-speed standard 2in1 module or W-series discrete IBGT.

Connectors compatible with V-IPM series terminal shapes (by HIROSE ELECTRIC CO., LTD.) are on the market.
P630: MA49-19S-2.54DSA, MA49-19S-2.54DSA(01)
P631: MDF7-25S-2.54DSA
Please contact HIROSE ELECTRIC CO., LTD. to purchase the relevant connector or verify reliability.

The compatible tab is the 110 series. Please select a tab terminal which has the tab dimensions of 2.8 mm width, and 0.5 mm plate thickness. Relevant products are available on the market from Tyco Electronics Japan G.K., J.S.T. MFG. CO., LTD., and NICHIFU Co., Ltd. Please contact any of these companies for details.

It is a pin type that allows PCB mounting without soldering. It is used in PIM and 6-Pack products. The time required for the assembly process is reduced as connection is completed by pressing an IGBT module over PCB's through-hole and applying pressure from the base side. Special press and press-in tools are required. We do not sell presses or tools.

VDA and VDN use different material for their insulating substrates, resulting in separate thermal resistance values. The VDA type uses aluminum oxide, while the VDN type uses high heat-radiation material, with approximately 30% less thermal resistance than that of VDA. It is effective when achieving a lower T_j max. or longer ΔT_j power cycle life expectancy.

A bootstrap circuit is one that is composed of a control power supply to drive high-side IGBT. It is possible to have a single power supply as it does not require a transformer with multiple secondary windings. Its built-in bootstrap resistance and bootstrap diode (BSD) gives a small IPM to configure a bootstrap circuit simply by adding an external bootstrap capacitor.

IPM V-series input control signal is IGBT-on when set at Low. A small IPM's input control signal is IGBT-on when set at High.

The thermal resistance value may differ even in the same rating, when comparing different families of products made by Fuji Electric or other companies. A low thermal resistance in a certain product may be due to a larger semiconductor chip size, or the use of a ceramic insulating substrate with good thermal conductivity.

1 device represents a value per arm (IGBT+FWD). Some models connect multiple chips per arm in parallel. This parallel-chip configuration is counted as one chip.

It represents an external resistance. It excludes the module's built-in R_G(int).

RBSOA is an abbreviation of Reverse Bias Safety Operating Area. The data sheet contains a characteristic graph describing double the rated voltage and rated current under the condition of maximum continuous operation temperature T_j(op). It illustrates a range of V_CE and I_C where safe operation is maintained when IGBT is turning off. The operation can be repeated within the RBSOA range.

SCSOA is an abbreviation of Short Circuit Safety Operating Area. During an incident with an inverter device, such as a load short-circuit, arm short-circuit, or ground fault, a current that is several times higher than the rated current flows in the IGBT. SCSOA is provided to protect the IGBT even during these instances. SCSOA has different characteristics depending on the generation or withstand voltage of IGBT. Refer to the technical documents of individual models.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

There are two types of noise: conductive noise (noise terminal voltage) and radiation noise. Conductive noise propagates over a conductor or earth wire in a main circuit. It is divided into two groups: normal mode and common mode. Radiation noise is generated within a device and emitted into the air because the device wiring or casing works as an antenna. For details, refer to IGBT's Application Manual Chapter 10.

"Conductive noise can be reduced through methods such as adding an LC filter on the AC power side, adding a ferrite core, or adjusting the gate resistance to suppress dv/dt at the time of switching.
For details, refer to IGBT's Application Manual Chapter 10."

Radiation noise can be reduced through methods such as reducing the loop current area where noise is generated, or adjusting the gate resistance. For details, refer to IGBT's Application Manual Chapter 10.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

A stencil mask is a 200 μm-thick, metal plate with multiple holes punched in the compound application area. A compound can be applied with a uniform thickness of 100 μm when clamping the stencil to a heat sink after application. We do not sell stencil masks but we can provide a mask drawing that corresponds to the relevant package.

It will cause a separation of aluminum wire, or a crack in the solder under the chip. Thermal destruction will result from the current concentrating on the relevant part of the chip, or increased thermal resistance.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

The junction temperature Tvj doesn't increase immediately when power losses are generated on a semiconductor chip. There is a time delay due to thermal capacity of materials composing the IGBT module. The equation in the data sheet shows the relationship of the transient thermal resistance to the pulse width t_w when a single square wave pulse (power loss) is applied. Transient temperature rise of the junction ΔT_(j-c) can be obtained from the transient thermal resistance.

The average value of diode losses in the converter circuit is obtained from the formula below.

Major circuit configurations of 3-level inverters can be categorized in 2 groups, I-type and T-type as shown in the figure below. Fuji Electric has commercialized a T-type which applies two Reverse Blocking IGBTs (RB-IGBT) as a bi-directional switch. The loss can be made smaller compared with the conventional T-type where diode is connected in series with IGBT.

If the stray inductance L_s of the main circuit is small, V_CE voltage drop (ΔV=-L_Sx di/dt) becomes small and E_on becomes large.

For dimensions which are not described in the outline drawing, please contact Fuji Electric Corp. of America or your local sales representative or distributor.

"Fuji has released products with 2500 V isolation voltage (V-IPM, R-IPM) for general industrial application and Small IPMs with 1500 V isolation voltage for air conditioners. The IPMs for general industrial application have a good heat spread characteristic thanks to a copper base plate, and they have protection functions with on chip temperature and current sensors. They are used for servo systems, robots, elevators, etc.

Small IPMs, on the other hand, have a compatible package to other industry-standard package, and offer an advantage of simple peripheral circuit designing thanks to built-in level-shift circuits with high withstand voltage and bootstrap diode."

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

The short-circuit withstand capability varies with chip generation and withstand voltage. Technical documents that show the relation of the short-circuit withstand capability t_SC as a function of DC voltage V_CC are available. Please download them from our web site.

In the case of excess current due to an accident or abnormal operation of an inverter device, the time from the start of the short-circuit current until the IGBT breakdown is called the short-circuit withstand capability. The protection circuit has to be designed to detect excess current in a short time not exceeding the short-circuit time and to turn off the gate pulse.

For each pin 50 A is the maximum.

They are the same.

"(1) Low power dissipation
Compared with Fuji's conventional products (the 6th Generation V Series), power loss during inverter operation is reduced by 10%.
(2) Miniaturization
By suppressing heat generation together with power loss reduction, miniaturization of about 36% is achieved compared with conventional products.
(3) High temperature operation and high reliability
Implementation of continuous operation at the maximum junction temperature T_vjop of 175^oC, and improvement of reliability.
For details, please refer to 7th Generation IGBT Module "X Series" New Product Information."

"Let's consider the case where two IGBTs with different V_CEsat are connected in parallel.
(1) A larger amount of the current will flow through the IGBT with smaller V_CEsat.
(2) Due to the larger current flow, the total loss of the IGBT becomes large and the junction temperature increase.
(3) If the IGBT has a positive temperature coefficient, V_CEsat increases with increasing junction temperature T_vj and hence, the current will decrease until current balance is achieved."

The data sheets can be downloaded from Fuji Electric web site. The use of parametric search is recommended. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

They have almost no frequency dependence in the range of f=1k - 1MHz.

Please refer to the Technical Document of "Carrier frequency dependency of control power supply consumption current".

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please refer to Chapter 4.2 of Application Manual.

RC-IGBT is an acronym of "Reverse Conducting Insulated Gate Bipolar Transistor". The RC chip combines both, IGBT and FWD, in one single chip. It has excellent heat dissipation due to alternating operation of IGBT and FWD as well as reduced number of chips promise miniaturization and high reliability of the IGBT module.

"To prevent a short-circuit in the upper and lower arms, it is necessary to set an on-off timing delay between the different arms. During the so called 'dead time' period both devices are switched off.
For details, refer to Chapter 7.3 of IGBT Module Application Manual."

When a motor stops, the brake IGBT is used to convert kinetic energy of the motor into electric energy and to consume the energy as heat of a resistor (damping resistor). Deceleration time of the motor can be reduced when using a damping resistor. Make sure that the DC voltage does not increase too much with the regenerated energy and exceed the breakdown voltage of the electrolytic capacitor.

A board for characteristic evaluation of the module is available. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please refer to the Mounting Instruction.

Power cycle capability is the capability of the module to withstand repeated heating and cooling. The case temperature T_c will goes up and down until the modules fails: Stress strain is generated between the metal base plate and the insulating substrate causing fatigue in the solder under the insulating substrate. Refer to technical documents describing the relation of ΔT_c and the expectancy of life of the device.

A range between -5V and -15V is recommended. With lower -V_GE, the turn-off time t_off becomes large and the turn-off loss E_off increases. Additionally, the IGBT may misfire and cause a short-circuit current flow.

ΔT_j power cycle breakdown mode will become solder degradation mode in the operation with large temperature variation and wire peeling mode in the operation with relatively small temperature variation. Additionally, the transition from plastic to elastic behavior occurs at around 50^oC, which causes an inflection point in the curve.

They are almost proportional. The switching loss increases as the DC voltage becomes higher.

In operations where the junction temperature T_vj of a semiconductor chip changes, thermal stress is generated between the materials of the power module. Fatigue will be accumulated from repeated thermal stress, leading to breakdown in the end. Increasing temperature change ΔT_vj, leads to a reduction in the lifetime of the power module. It is called as the power cycle capability ΔT_vj.

It is not recommended.

Yes, it is possible.

Similar to an IGBT, the FWD has a SOA (Safty Operating Area). Please refer to the following graph which is also shown in the product specifications. It displays an area that indicates the maximum allowed power P_max. Since P_max is the product of the voltage V_AK applied during reverse recovery and the forward current I_F, it limits these two parameters. The design should take into account the SOA and assures that the locus V_AK-I_F stays within the SOA. If power, exceeding P_max, is applied, FWD may be damaged. In that case, take countermeasures like increasing the gate resistance of the IGBT ON-side, or using a snubber circuit to suppress the surge voltage.

"Please solder the pins within "Soldering Heat-Resistance Test Conditions" specified in the reliability test items in the specifications.
Please confirm the actual terminal temperature by using a thermocouple."

These are only exemplary temperatures. If they are not suitable for your application, use the curve that gives the shortest lifetime for your design.

Please do not connect that terminal to anything. It does not have any electrical connection to the IGBT module.

For a voltage boosting circuit, we can offer chopper modules with an IGBT in the low arm side. For step-up/down converter a 2in1 module with 2 IGBTs in series would be suitable. If only one of the two IGBTs is used, please short-circuit gate and emitter of the other one to avoid misfiring.

Yes, it is possible to use a 2in1 module in a chopper circuit and use only one of the two IGBTs. To avoid misfiring, please carefully short-circuit gate and the emitter of the unused IGBT.

No. The dead time indicates the dead time on IPM input terminal Vin.

If diode loss increases, check that the diode temperature does not exceed the absolute maximum ratings, and that ΔT_vj power cycle capacity is satisfied. Also check that the system will not be broken due to inrush current at power-on or temporary interruption of power.

The alarm output period t_FO is minimum 20μs, but typical value is about 50μs. The typical value, however, is not guaranteed.

Fuji recommends the paste 'G776'. Please contact Shin-Etsu Chemical for details. However, Fuji Electric does not guarantee its characteristics when combined with IGBT module.

It is ±10%. However, it is not guaranteed.

The temperature of LVIC (low voltage IC for low arm IGBT drive) is detected. It is not the junction temperature of the IGBT.

IGBT gate drive ICs are supplied from many companies including BROADCOM, Renesas Electronics, Texas Instruments, ISAHAYA ELECTRONICS and TOSHIBA. As the ICs contain short-circuit protection and voltage drop protection circuits within the chip, design of the drive circuit will be simplified. An IGBT module evaluation board with mounted drive IC is available. Please download the information and use it for your reference. However, Fuji Electric does not guarantee its characteristics when combined with an IGBT module.

It is a protection circuit, added to suppress a surge voltage between the collector and the emitter.

Short-circuit all main and control terminals and apply a specified AC voltage between all terminals and the backside metal area for a specified time period.

"Including the V Series, -I_C represents the maximum DC forward current which is allowed for the built-in diode, and -I_{c, pulse} represents the maximum pulse forward current which is allowed for the built-in diode.
From X Series on, to be easily recognized as compliant to IEC standards and as diode elements, they have been changed to I_F and I_FRM."

"CTI is the abbreviation for "Comparative Tracking Index".
Those with the comparative tracking index, that indicates tracking resistance as a molding resin, in the material group I in the table are required. The resin molding of power modules used in harsh environment, such as for solar panel generation and wind power generation, improvement in tracking resistance is mandatory. "

There are several snubber capacitors with different withstand voltages and capacitances which meet the main terminal pitch. Please contact RUBYCON CORPORATION.

"M***: IGBT module product
P***: IPM product"

The simulator is based on data obtained by measurement results. The measured values are within the range of representative characteristics described in each data sheet. Input of conditions that are away from actual measurement range will create an error.

Since the TjOH protection and the UVLO protection are independent from input signals, an alarm signal will be issued when overheat or power supply voltage drop occurs. For Short Circuit (SC) and Over Current (OC) protection will be activated when the input signal is IGBT ON (V_in: Low Level).

It will be reset automatically. After the alarm output period t_FO elapsed and the cause of failure has been removed, the protection will reset automatically.

"V_CEsat and V_F of the terminal are ON voltages measured on the main terminals and include voltages induced on the internal wiring of the module. Use them as a reference when On voltage is measured on the terminal.
On the other hand, V_CEsat and V_F characteristics of the chip indicate IN voltage closest to the semiconductor chip. To obtain the conduction loss that occurs in IGBT and FWD, calculate it from the ON voltage value of the chip."

The color is not important from technical point of view. All elder modules including the 5th generation module (U Series) are black. Starting with the 6th generation module (V Series) a natural color (beige) is used to easyly identify the RoHS compliant modules.

"The resistance of the main current wiring in the module can be calculated from the values of V_CEsat and V_F of the terminal and the chip shown in the data sheet.
Example: 2MBI600XNE120-50 (T_vj=25^oC, Ic=600A)
V_CEsat (terminal) = 2.20V, V_CEsat (chip)=1.45V
Internal wiring resistance R_int = (2.20V-1.45V)/600A=1.25mΩ
Please contact us for the value of internal wiring inductance.
"

Values of I²t and I_FSM described in the specification/data sheet shall be the guaranteed value for the half-sine 10ms surge current waveform. For I²t and I_FSM for other wavefrom or condition, please contact us.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

IPMs do not have a dead time setting function. Please set an adequate dead time in the gate signal input from the outside.

The value of Q_G does only slightly depend on power supply voltage, current and temperature, hence it is not necessary to consider this dependency in real application.

Fuji recommends a dead time larger than 3 μs for IGBT module. For IPMs dead time should be larger than 1 μs.

The accuracy does not change. The TEMP output voltage shows clamping characteristics at room temperature or below. Please attach a pull-down resistor, if linearity of the output voltage is required for temperatures below room temperature.

The TEMP terminal can directly be connected to the MPU.

It is an anolog signal.

"In these two different module types different chips are used.
E-type: Standard type
P-type: Soft switching type suppressing turn-off surge voltage"

If the turn-off breaking current increases, di/dt increases as well and is causing an induced electromotive force L·di/dt due to the internal inductance in the module L. Hence, high voltage will be applied to the IGBT chip and might cause some avalanche breakdown. Therefore maximum voltage needs to be reduced when the current increases.

Short circuit withstand capability in the datasheets for our modules are defined in DC short circuit condition (arm short circuit). In the case of load short circuit, the short circuit occurs during conducting mode of the IGBT, and the larger current than the saturation current may flow into the device.

IGBTs developed in recent years are designed to not cause latch-up within a range of normal usage.

It varies depending on conditions such as internal structure of the module, thermal grease and cooling fins. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

IGBT module do not have a specification of the FBSOA. For IGBT modules the SOA of the FWD is given in the datasheets.

IPM contains electronic parts such as PCBs, ICs and capacitors. Therefore, it has a narrower temperature range compared to regular IGBT modules.

This is not problematic. Small IPM modules already contain bootstrap diodes and a limiting resistor inside.

If voltage is applied between C-E while the gate is open, the divided voltage by C_res and C_ies is applied to the gate, as well. This may lead to a gate breakdown from overvoltage, or a breakdown by heating from elevated device temperature due to a unstable ON state of the gate. As such, for the inverter circuit, the sequence where voltage between C-E is applied after gate circuit is established is recommended. Even if this sequence is not set up, a resistor inserted between G-E to stabilize the gate potential will help to avoid this breakdown phenomenon. In that case, a resistance of about 10kΩ against open (infinite resistance) is recommended. If the resistance is too small, you will see problems such as lower gate voltage than the designed value and an increased current consumption in the drive circuit (because the gate voltage will be the one divided with gate resistance R_G.) Therefore, a resistance sufficiently low against the open value is enough and you don’t need to change it according to the current rating of the device.

The Safe Operation Area (SOA) of a diode indicates the area where the maximum power determined by a product of the current and voltage applied during reverse recovery can be allowed. This maximum power is called as P_max.

The big benefit of using RB IGBT is that the number of elements that the current goes through is smaller compared with the conventional methods. This leads to a reduction of conductance losses.

Its maximum rated terminal temperature is 125^oC. However, the allowable maximum terminal temperature of Fuji PrimePACK ^TM is 150^oC.

Mainly the turn-off loss E_off will be affected. As -V_GE increases, E_off decreases.

The breakdown mode of an element may include overcurrent, overvoltage, overheat, etc. Causes of each breakdown mode have to be investigated. In the real world, however, it is difficult to identify the cause by the breakdown status of an IGBT module alone. It is important to consolidate information such as the breakdown voltage V_CE, current I_C, gate voltage V_GE, and to make comprehensive investigations. For details, refer to the Application Manual.

A 3-Level inverter realizes system miniaturization and higher efficiency compared to a 2-level inverter. A 2-Level inverter controls the voltage waveform of the converter output with 2 electric potentials while a 3-level inverter controls it with 3 electric potentials. As the 3-level converter creates an output waveform closer to a sinusoidal curve, a reduction of LC filter size and switching loss is expected.

There no problem in cutting pins. But please be careful not to apply stress to the PCB.

Follow the recommended circuit for the driver IC. Detemine the circuit constants so that the protection operation will be finished within the period of the short-circuit time indicated for each series.

As short-circuit current is determined by the gate voltage, the SCSOA has to be judged by the gate voltage at the time of a short circuit. As the gate voltage may go up in some cases at the time of short circuit, investigation under the worst conditions is recommended.

There is a temperature difference between the surface temperature and the backside temperature. The latter becomes higher.

It is not an average value across the copper base plate. It is the case temperature directly under the chip.

The case side temperature and the case temperature T_c are different. Heat of a semiconductor chip is conducted through an insulating substrate to the copper base and heatsink. The case side temperature becomes considerably low, compared with T_c.

The temperature of the NTC thermistor and the case temperature are different. Generally speaking, the case temperature T_c directly under the chip becomes higher than the temperature of the NTC thermistor.

The temperature of the NTC thermistor and the junction temperature T_vj are different. The junction temperature T_vj becomes higher than the temperature of the NTC thermistor. The thermistor is mounted on the same insulating substrate as the IGBT chip but is away from the IGBT chip. It follows the junction temperature T_vj with an offset in time.

The temperature of the NTC thermistor and the heatsink temperature T_s are different.

They are the same. Refer to the Data sheet of each type for resistance value and B constant.

If roller and/or spatula is used to apply thermal grease, the amount of application may vary or it is impossible to coat the grease evenly. Therefore, those tools are not recommended. Instead, we strongly recommend an application of the grease using stencil masks (See Q40).

When you estimate the junction temperature T_vj, please use the chip characteristic data for the calculation.

Please contact HIROSE ELECTRIC. CO., LTD.

The benefits are the negligible small diode losses of the SiC diodes. In the following two comparative examples are given for an all-silicon device and a hybrid device with 1200V/300A rating.
(1) If both modules have a fixed output current I_o=212Arms and the switching frequency of the hybrid module is raised to 1.5 times of the all-silicon one, they still have similar losses.
(2) If both modules have a fixed switching frequency f_sw=16kHz and the output current of the hybrid module is raised to 1.2 times of the all-silicon device, they still have similar losses.

Yes, it is available on the web site. Please download the data from the link below.

Yes. If the gate voltage V_GE is high, short-circuit current I_SC will increase, and short-circuit withstand time t_SC will become shorter.

The calculation can be done by using the Fuji IGBT Simulator which you find on the webpage.

The trade-off relationship of an IGBT describes the relation between ON-state conduction losses, switching losses and short circuit withstand capability. An IGBT can be optimized for either one. For example, when reducing the conduction losses, the switching losses will increase and the short circuit withstand capability decrease.

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

The data sheets can be downloaded from Fuji Electric web site. The use of parametric search is recommended. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

You can verify the IGBT by checking the leakage current between G and E, and C and E, using a transistor curve tracer (CT). Simple failure diagnosis can also be done using a voltage, resistance tester in place of a CT. For details, refer to Application Manual Chapter 4-2.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

There are two types of noise: conductive noise (noise terminal voltage) and radiation noise. Conductive noise propagates over a conductor or earth wire in a main circuit. It is divided into two groups: normal mode and common mode. Radiation noise is generated within a device and emitted into the air because the device wiring or casing works as an antenna. For details, refer to IGBT's Application Manual Chapter 10.

"Conductive noise can be reduced through methods such as adding an LC filter on the AC power side, adding a ferrite core, or adjusting the gate resistance to suppress dv/dt at the time of switching.
For details, refer to IGBT's Application Manual Chapter 10."

Radiation noise can be reduced through methods such as reducing the loop current area where noise is generated, or adjusting the gate resistance. For details, refer to IGBT's Application Manual Chapter 10.

"Let's consider the case where two IGBTs with different V_CEsat are connected in parallel.
(1) A larger amount of the current will flow through the IGBT with smaller V_CEsat.
(2) Due to the larger current flow, the total loss of the IGBT becomes large and the junction temperature increase.
(3) If the IGBT has a positive temperature coefficient, V_CEsat increases with increasing junction temperature T_vj and hence, the current will decrease until current balance is achieved."

The data sheets can be downloaded from Fuji Electric web site. The use of parametric search is recommended. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

"To prevent a short-circuit in the upper and lower arms, it is necessary to set an on-off timing delay between the different arms. During the so called 'dead time' period both devices are switched off.
For details, refer to Chapter 7.3 of IGBT Module Application Manual."

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

I²t is a Joule-integral for overcurrent allowed within the range that does not result in element destruction. Overcurrent is defined in one cycle at commercially restricted half-waves (50, 60 Hz).

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

There are two types of noise: conductive noise (noise terminal voltage) and radiation noise. Conductive noise propagates over a conductor or earth wire in a main circuit. It is divided into two groups: normal mode and common mode. Radiation noise is generated within a device and emitted into the air because the device wiring or casing works as an antenna. For details, refer to IGBT's Application Manual Chapter 10.

"Conductive noise can be reduced through methods such as adding an LC filter on the AC power side, adding a ferrite core, or adjusting the gate resistance to suppress dv/dt at the time of switching.
For details, refer to IGBT's Application Manual Chapter 10."

Radiation noise can be reduced through methods such as reducing the loop current area where noise is generated, or adjusting the gate resistance. For details, refer to IGBT's Application Manual Chapter 10.

The data sheets can be downloaded from Fuji Electric web site. The use of parametric search is recommended. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

It stands for Insulated Gate Bipolar Transistor. It is a voltage-controlled device that has an insulated gate with an oxide insulating film. The gate structure is similar to a MOSFET. It combines the positive characteristics of a MOSFET and bipolar transistor. It is an indispensable component in a power conversion circuit for high-voltage and large-current applications. It is mainly used in consumer equipment such as air conditioners (a/c) or microwave ovens, industrial equipment such as elevators, and inverters for hybrid electric vehicles (HEV) and electric vehicles (EV).

Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.

An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.

It stands for Silicon Carbide. SiC has a wider bandgap width compared to silicon, and is expected to become the next-generation power device material for high-temperature operation, high-speed switching, low power-loss, and high withstand-voltage applications.

A module is a package which contains several power semiconductor devices that form a bridge circuit, etc. A modul provides thermal and electrical contact as well as the electrical insulation maintained between the heat-radiation surface and the electric part. For this reason multiple modules can be placed on the same heat sink. Compared to setups that operate with multiple discrete products, the module can handle a larger current and is superior because it is small, lightweight, and easy to assemble.

It stands for Power Integrated Module. A PIM is a module that is composed of a 3-phase rectifier circuit, 3-phase inverter circuit, and brake circuit. It is also called CIB (Converter Inverter Brake).

This is a product that uses a SiC-SBD (Shottky Barrier Diode) as FWD component, with a combination of Si-IGBT. This combination reduces the losses by approximately 25% in comparison with conventional all-silicon chip products. SiC devices are the focus of attention as next-generation semiconductors that offer superior characteristics in areas such as high withstand-voltage, high-temperature, and high-frequency operations.

PIM is a product that integrates a 3-phase converter circuit, brake circuit, and 3-phase inverter circuit into a single module. This leads to a compact main circuit design. IPM, on the other hand, offers an advantage of simple peripheral circuit designing, by use of its built-in control IC. This IC contains gate driving and protection circuits, in addition to brake and inverter circuits.

Refer to "Part numbers" in the Semiconductors General Catalog.

Refer to the description of terms in Application Manual Chapter 2-1.

Regarding voltage and current rating, refer to Application Manual Chapter 3-1 on "how to select an IGBT module". Before use, please verify that the voltage, current, temperature, and other factors stay within the maximum rating range. Please contact Fuji Electric Corp. of America or your local sales representative or distributor for support.

Maximum collector-emitter voltage (V_CES) is specified as the maximum rating in the relevant specifications. The voltage should never exceed this value.

The optimum gate resistance value (R_G) varies depending on the circuit configuration or operating environment used. The data sheet describes the recommended resistance value to minimize switching loss. Determine an appropriate gate resistance (R_G) after considering the relevant switching loss, EMC/EMI, surge voltage, and unexpected characteristics such as vibration, without deviating from the descriptions contained in the data sheet.

The gate resistance value (R_G) greatly impacts dv/dt, radiation noise, voltage/current surge, and switching loss. Please comprehensively determine an appropriate value that corresponds to the target figure of your actual design. As for reference, a recommended turn-on resistance value (R_G(on)) is twice or higher than that of the standard value from datasheet, and a recommended turn-off resistance value (R_G(off)) is one to two times that of the standard value.

A surge voltage is generated by high di/dt, and wiring inductance outside the module, at the time of switching (L*di/dt). Some of the ways to suppress this problem are as follows:
(1) Add a protective circuit
(2) Reduce di/dt by adjusting R_G or -V_GE
(3) Reduce inductance by making the main circuit wiring thicker and shorter, and using a copper bar and parallel flat wiring
For details, refer to Application Manual Chapter 5.

A larger gate resistance (R_G) will increase switching loss, and make it more prone to generating an arm short circuit due to an insufficient dead-time. A smaller gate resistance (R_G)may cause a sudden surge voltage. For details, refer to Application Manual Chapters 2-2.2 and 7-1.3.

Please measure at the main terminal of the product. If a terminal is separately specified for measurement in the data sheet, please use the specified terminal.

An insufficient reverse-bias voltage (-V_GE) between the gate and emitter may cause the IGBT to mis-fire, leading to a short-circuit current. If the current is cut off the surge voltage and the generated loss may damage the product. For details, refer to Application Manual Chapters 4-3.3 and 7-1.2.

Please apply a reverse-bias voltage (-V_GE) of -5 V or higher (-15 V recommended; max. -20 V) between the gate and emitter in the IGBT that is not being used. An insufficient reverse-bias voltage (-V_GE) may cause the IGBT to misfire due to dV/dt at the time of reverse-recovery of the FWD, resulting in damage.
For details, refer to Application Manual Chapter 3-10.

Refer to Application Manual Chapter 7-5. It provides precautions regarding the photo-coupler's noise capability, wiring between the drive circuit and IGBT, and gate overvoltage protection.

The minimum temperature is specified by the storage temperature (T_stg). Please consider that there will be a reduced device withstand voltage and peripheral component (capacitor, control circuit) characteristics under low temperature before use.

A lower temperature reduces the IGBT's maximum collector-emitter voltage (V_CES). The data sheet describes the maximum collector-emitter voltage (V_CES) under the condition of T_j=25^oC. Refer to the technical information describing temperature dependency included in the technical documents under Design Support.

Fuji provides a free software to calculate the IGBT losses. The following steps can be followed to obtain the figure.
(1) Download our Loss Simulator
(2) Launch our Loss Simulator
(3) Enter data on the chip series, circuit configuration, voltage rating, and current rating. Select your model type. Click ""Next""
(4) Enter data on the circuit, PWM modulation scheme, and calculation conditions. Click ""Calculate""
(5) The calculation result will be displayed
For details, refer to the user manual.

The IGBT Simulator can estimate the power loss and temperature for a 3-phase 2-level inverter circuit, 3-phase 3-level inverter circuit, and chopper circuit of an IGBT and FWD. It can also calculate loss and temperature under variable inverter operation conditions such as output current and switching frequency. Changes in loss and temperature when the load continuously fluctuates, can also be obtained.