SiC Based Schottky Barrier Diodes
SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation, and high-temperature operation. Power semiconductors that make use of SiC achieve a significant reduction in energy consumption, and can be used to develop smaller and lighter products. Fuji Electric Hybrid SiC modules consist of a SiC-based SBD (Schottky Barrier Diode) and Si-based IGBT (Insulated Gate Bipolar Transistor). With a capacity line-up ranging from 600 V to 3300 V, this series contributes to energy saving and miniaturization in various types of industrial equipment, general motor drives UPS, PCS, and more.
- The SiC based SBD significantly reduces diode switching loss and leads to the IGBT turn-on loss. This reduces total device loss by 28%, when compared with one of our conventional inverters using Si modules.
Higher Output leading to Smaller Footprint
- Hybrid-SiC modules are capable of high-frequency and higher output operation, at the same loss and size as conventional products. They also can contribute to the miniaturization of peripheral components, such as filters, allowing for space-savings in equipment.
- Achieves continuous operation at 150°C, along with a maximum junction temperature of 175°C, through chip optimization and improved reliability and heat resistance of the package.