It stands for Reverse Blocking Insulated Gate Bipolar Transistor. Reverse-parallel connection of RB-IGBT enables both way switching. It is incorporated in AT-NPC (Advanced T-type Neutral Point Clamped) 3-level inverters, to increase the power conversion efficiency because there are less current passing elements.
An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.
Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.
It stands for Insulated Gate Bipolar Transistor. It is a voltage-controlled device that has an insulated gate with an oxide insulating film. The gate structure is similar to a MOSFET. It combines the positive characteristics of a MOSFET and bipolar transistor. It is an indispensable component in a power conversion circuit for high-voltage and large-current applications. It is mainly used in consumer equipment such as air conditioners (a/c) or microwave ovens, industrial equipment such as elevators, and inverters for hybrid electric vehicles (HEV) and electric vehicles (EV).
