Junction temperature is the temperature at joints on a semiconductor chip.
FAQ Categories: Data Sheet
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What is the junction temperature (Tj)?
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Is there a temperature dependency in the IGBT’s maximum collector-emitter voltage (VCES)?
A lower temperature reduces the IGBT’s maximum collector-emitter voltage (VCES). The data sheet describes the maximum collector-emitter voltage (VCES) under the condition of Tj=25oC. Refer to the technical information describing temperature dependency included in the technical documents under Design Support.
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Can an IPM operate at -40oC?
Our IPM is designed with a lowest guaranteed operating temperature of Tc=-20oC. Operation below this temperature has not been evaluated, and any use below -20oC will void your warranty. At such temperature, there are concerns about possible malfunctions due to a lower device withstand voltage or reduced capacity of the used capacitor.
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What is the lowest operation temperature for an IGBT module?
The minimum temperature is specified by the storage temperature (Tstg). Please consider that there will be a reduced device withstand voltage and peripheral component (capacitor, control circuit) characteristics under low temperature before use.
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Which terminal should be used to measure the collector-emitter voltage (VCE) when switching?
Please measure at the main terminal of the product. If a terminal is separately specified for measurement in the data sheet, please use the specified terminal.
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What ohm value is set for internal gate resistance (RG) in an IGBT module?
“Refer to the data sheet where internal gate resistance (RG) values for the 6th-generation V-series and 7th-generation X-series IGBT module are described.
Please contact us with a model type number if it is not shown in the 6th-generation data sheet or if it is a product prior to the 6th-generation (U-series, S-series).”
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Is it always expedient to use the gate resistance (RG) value indicated in the data sheet?
The optimum gate resistance value (RG) varies depending on the circuit configuration or operating environment used. The data sheet describes the recommended resistance value to minimize switching loss. Determine an appropriate gate resistance (RG) after considering the relevant switching loss, EMC/EMI, surge voltage, and unexpected characteristics such as vibration, without deviating from the descriptions contained in the data sheet.
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Can the voltage exceed IGBT’s maximum collector-emitter voltage (VCES) for a short time?
Maximum collector-emitter voltage (VCES) is specified as the maximum rating in the relevant specifications. The voltage should never exceed this value.
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What is the meaning of each item in the IGBT data sheet?
Refer to the description of terms in Application Manual Chapter 2-1.
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How do I read IGBT module model types?
Refer to “Part numbers” in the Semiconductors General Catalog.
