It stands for Silicon Carbide. SiC has a wider bandgap width compared to silicon, and is expected to become the next-generation power device material for high-temperature operation, high-speed switching, low power-loss, and high withstand-voltage applications.
FAQ Categories: SiC Device
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What is the difference between an IGBT and a MOSFET?
An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.
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Why is FWD required?
Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.
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What is an IGBT?
It stands for Insulated Gate Bipolar Transistor. It is a voltage-controlled device that has an insulated gate with an oxide insulating film. The gate structure is similar to a MOSFET. It combines the positive characteristics of a MOSFET and bipolar transistor. It is an indispensable component in a power conversion circuit for high-voltage and large-current applications. It is mainly used in consumer equipment such as air conditioners (a/c) or microwave ovens, industrial equipment such as elevators, and inverters for hybrid electric vehicles (HEV) and electric vehicles (EV).