Do all switching losses depend on the gate reverse-bias voltage between the gate and the emitter (-VGE)? |

Home > FAQ > All, Driver Design, IGBT Module > Do all switching losses depend on the gate reverse-bias voltage between the gate and the emitter (-V_GE)?

Mainly the turn-off loss E_off will be affected. As –V_GE increases, E_off decreases.

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Do all switching losses depend on the gate reverse-bias voltage between the gate and the emitter (-V_GE)?

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