Fuji Electric’s discrete IGBT’s are used in applications such as UPS, power conditioners, air conditioners and welding machines. The new “W” series uses thinner chip technology, thereby reducing power loss and extending switching range to 100kHZ. Fuji Electric’s unique RB-IGBT technology is used for types having reverse blocking features that can be configured for bi-directional […]
The Ultra Low-IR Schottky-Barrier Diode (SBD) guarantees junction temperature of 175°C. Compared with the conventional low IR series, it offers equivalent VF while IR is reduced to 1/10 or less, enabling a reduced risk of thermal runaway and enhanced reliability at higher temperatures. The Super Low Loss Diode (LLD) series for PFC circuits is an […]
The Green Mode PWM-ICs have internal start-up circuits with a 500V/750V rating; low EMI noise by frequency diffusion; linearly reduced switching frequency at light load for low standby power with protection functions. The Green Mode Quasi-Resonant ICs have internal start-up circuits with a 500V rating; intermittent or linearly reduced switching frequency; and protection functions. The […]
Fuji Electric offers a high performance and easy-to-use, easy-to-design planer type power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.
Fuji Electric offers a customized IGBT module for Hybrid Electric Vehicle and Electric Vehicle motor control. We have recently developed a 650V/400A, 650V/600A 6-pack module that features a Direct liquid cooling Cu-base and a Pb-Free compact package, offering higher reliability and a longer lifespan. Our Automotive Pressure Sensors include both Low and High Sensors for […]
SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation and high-temperature operation. Power semiconductors that make use of SiC achieve significant reduction in energy consumption, and can be used to develop smaller and lighter products.
The IGBT is a high performance 6th generation IGBT/FWD chipset with a compact design that provides for greater power output. It has environmentally friendly modules with easy assemblage, solder-free options, and RoHS compliance. The IGBT turn-on switching characteristics include: improved noise-loss trade-off, reduced turn-on dv/dt, and excellent turn-on dic/dt. Turn-off switching characteristics include: soft switching […]