The trade-off relationship of an IGBT describes the relation between ON-state conduction losses, switching losses and short circuit withstand capability. An IGBT can be optimized for either one. For example, when reducing the conduction losses, the switching losses will increase and the short circuit withstand capability decrease.
The calculation can be done by using the Fuji IGBT Simulator which you find on the webpage.
Yes. If the gate voltage VGE is high, short-circuit current ISC will increase, and short-circuit withstand time tSC will become shorter.
Yes, it is available on the web site. Please download the data from the link below.
They are used in industrial inverters, auxiliary inverters for equipment in the Shinkansen cars, high capacity UPS, electric power storage system, etc.
The benefits are the negligible small diode losses of the SiC diodes. In the following two comparative examples are given for an all-silicon device and a hybrid device with 1200V/300A rating. (1) If both modules have a fixed output current Io=212Arms and the switching frequency of the hybrid module is raised to 1.5 times of […]
When you estimate the junction temperature Tvj, please use the chip characteristic data for the calculation.
If roller and/or spatula is used to apply thermal grease, the amount of application may vary or it is impossible to coat the grease evenly. Therefore, those tools are not recommended. Instead, we strongly recommend an application of the grease using stencil masks (See Q40).
They are the same. Refer to the Data sheet of each type for resistance value and B constant.