How should the gate resistance (RG) be determined?

The gate resistance value (RG) greatly impacts dv/dt, radiation noise, voltage/current surge, and switching loss. Please comprehensively determine an appropriate value that corresponds to the target figure of your actual design. As for reference, a recommended turn-on resistance value (RG(on)) is twice or higher than that of the standard value from datasheet, and a recommended […]

Is it always expedient to use the gate resistance (RG) value indicated in the data sheet?

The optimum gate resistance value (RG) varies depending on the circuit configuration or operating environment used. The data sheet describes the recommended resistance value to minimize switching loss. Determine an appropriate gate resistance (RG) after considering the relevant switching loss, EMC/EMI, surge voltage, and unexpected characteristics such as vibration, without deviating from the descriptions contained […]

Can the voltage exceed IGBT’s maximum collector-emitter voltage (VCES) for a short time?

Maximum collector-emitter voltage (VCES) is specified as the maximum rating in the relevant specifications. The voltage should never exceed this value.

How do I select a module by the rated parameters?

Regarding voltage and current rating, refer to Application Manual Chapter 3-1 on “how to select an IGBT module”. Before use, please verify that the voltage, current, temperature, and other factors stay within the maximum rating range. Please contact Fuji Electric Corp. of America or your local sales representative or distributor for support.

What is the meaning of each item in the IGBT data sheet?

Refer to the description of terms in Application Manual Chapter 2-1.

How do I read IGBT module model types?

Refer to “Part numbers” in the Semiconductors General Catalog.

What is the difference between PIM and IPM?

PIM is a product that integrates a 3-phase converter circuit, brake circuit, and 3-phase inverter circuit into a single module. This leads to a compact main circuit design. IPM, on the other hand, offers an advantage of simple peripheral circuit designing, by use of its built-in control IC. This IC contains gate driving and protection […]

What is a SiC hybrid module?

This is a product that uses a SiC-SBD (Shottky Barrier Diode) as FWD component, with a combination of Si-IGBT. This combination reduces the losses by approximately 25% in comparison with conventional all-silicon chip products. SiC devices are the focus of attention as next-generation semiconductors that offer superior characteristics in areas such as high withstand-voltage, high-temperature, […]

What does PIM mean?

It stands for Power Integrated Module. A PIM is a module that is composed of a 3-phase rectifier circuit, 3-phase inverter circuit, and brake circuit. It is also called CIB (Converter Inverter Brake).

What is a module?

A module is a package which contains several power semiconductor devices that form a bridge circuit, etc. A modul provides thermal and electrical contact as well as the electrical insulation maintained between the heat-radiation surface and the electric part. For this reason multiple modules can be placed on the same heat sink. Compared to setups […]