What is a RB-IGBT?

It stands for Reverse Blocking Insulated Gate Bipolar Transistor. Reverse-parallel connection of RB-IGBT enables both way switching. It is incorporated in AT-NPC (Advanced T-type Neutral Point Clamped) 3-level inverters, to increase the power conversion efficiency because there are less current passing elements.

What is the difference between an IGBT and a MOSFET?

An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.

Why is FWD required?

Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a […]

What is an IGBT?

It stands for Insulated Gate Bipolar Transistor. It is a voltage-controlled device that has an insulated gate with an oxide insulating film. The gate structure is similar to a MOSFET. It combines the positive characteristics of a MOSFET and bipolar transistor. It is an indispensable component in a power conversion circuit for high-voltage and large-current […]