Off Highway Vehicles (OHV)
Heavy Equipment Semiconductors
Fuji Electric’s semiconductors play a vital role in powering the next generation of Off-Highway Vehicles (OHV) and heavy equipment across demanding industrial environments. As construction, agriculture, mining, and material handling equipment continue to evolve, our semiconductor technologies help improve system efficiency, increase power density, and support more compact equipment designs. Fuji’s advanced IGBT and power semiconductor solutions are used in electric and hybrid drivetrains, auxiliary power systems, motor drives, and high-performance power conversion applications designed to withstand harsh operating conditions. With high thermal durability, fast switching performance, and proven reliability, Fuji Electric’s latest semiconductor technologies help manufacturers enhance equipment performance, reduce energy consumption, and support the transition toward cleaner, more efficient heavy machinery solutions. Scroll down to explore which semiconductor products are best suited for your application.
Semiconductors
Fuji Electric’s semiconductors play a critical role in Off-Highway Vehicles (OHV) and heavy equipment applications including construction, agriculture, mining, and material handling machinery. Our 7th generation RC-IGBT technology advancement enables high-efficiency power conversion and motor drive systems for electric and hybrid equipment. Our Discrete IGBT XS Series reduces switching loss and supports compact, high-performance inverter designs. Our SiC-SBD technology increases power efficiency while supporting higher temperature operation in demanding environments. Fuji Electric’s semiconductors are utilized in traction inverters, auxiliary power systems, electric pumps, compressors, and onboard charging systems for next-generation heavy equipment platforms. Our 7th generation IGBT, Discrete IGBT XS Series, and SiC-SBD technologies provide faster switching, improved thermal performance, and high reliability for rugged industrial applications.
Discrete IGBT XS Series
- VCE(sat) – Switching Loss Trade-off Improvement – Reduces VCE(sat) by 0.5V and reduces switching loss by 20%
- Optimized IGBT, FWD – Optimized for approximately fc = 20 kHz operation
- Ideal for 3-Level Inverters, Bridge Inverters, and PFC Circuits – Reduces inverter loss by 12% compared with previous products
SiC Schottky Barrier Diode
- Increase Power Efficiency – 18% lower conduction loss than conventional products
- Enhanced Reliability – 64% higher surge current capability
- Decrease Device Temperature – Lower conduction loss than products in whole temperature range
The 7th Generation IGBT Modules Achieves All Market Demands!
- Size Reduction – Size Reduction of IGBT Modules was realized by the 7th Generation Chip & Package Technologies
- Low Loss Energy – The Inverter Losses of the 7th Generation IGBT Modules were reduced by 10% compared to the 6th Generation
- High Reliability – Continuous Operating Temperature was Expanded up to 175oC by Improvement of Chip Characteristics & Package Reliability
