RC-IGBT Modules
Reverse Conducting IGBTs (RC-IGBTs)
RC-IGBT is an acronym of “Reverse Conducting Insulated Gate Bipolar Transistor”. Conventional semiconductors combine one IGBT chip and one FWD chip per arm. RC-IGBTs combine both the IGBT and FWD, in one single chip. This provides excellent heat dissipation due to the alternating operation of IGBT and FWD. It also enables miniaturization and high reliability of the IGBT module through a reduced number of chips.
Features:
- Latest chip technology (X-series IGBT)
- Similar loss and trade off characteristics as Fuji X-series
- Higher current density per package
- Combines IGBT and FWD in same chip
- Creates bigger chip area to DCB ratio inside of power modules
- Saves total chip area
- Enables increase of module ratings
- Upgrade from 1200V 800A –> 1000A in DualXT package
- Upgrade from 35 A 1200 V in small PIM package up to 50 A
- Reduced temperature ripple in power cycling
- Improved lifetime
RC-IGBT Product Finder
Search by part number or click the filter boxes to select the exact parameters you need.
Part Number | Package | Status | Series | VCES | IC | Width | Length | RoHS | Net Mass | |
---|---|---|---|---|---|---|---|---|---|---|
wdt_ID | Part Number | Package | Status | Series | VCES | IC | Width | Length | RoHS | Net Mass |
12 | 2MBI1000XRNE120-50 | M285 |
Existing | 7th-Gen X Series | 1,200 | 1,000 | 62.00 | 150.00 | Yes | 350 |
13 | 2MBI1000XRNF120-50 | M286 |
Existing | 7th-Gen X Series | 1,200 | 1,000 | 62.00 | 150.00 | Yes | 350 |
188 | 2MBI2400XRXG120-50 Request a Datasheet |
M291 |
Under Development | 7th-Gen X Series | 1,200 | 2,400 | 89.00 | 250.00 | Yes | 1,350 |
189 | 2MBI2400XRXG170-50 Request a Datasheet |
M291 |
Under Development | 7th-Gen X Series | 1,700 | 2,400 | 89.00 | 250.00 | Yes | 1,350 |
191 | 7MBR50XKB065-50 | M731 |
Existing | 7th-Gen X Series | 650 | 50 | 56.70 | 62.80 | Yes | 45 |
192 | 7MBR50XKD065-50 | M733 |
Existing | 7th-Gen X Series | 650 | 50 | 56.70 | 62.80 | Yes | 45 |