What is the V-series of IGBT?

This product series uses our company’s 6th-generation IGBT chip set. This chip generation uses a trench gate structure that forms a three-dimensional gate over the silicon surface. It also contains a field stop structure (FS structure) to improve the characteristic of the element withstand voltage. These technologies made it possible to use a thinner silicon […]

What is the difference between PIM and IPM?

PIM is a product that integrates a 3-phase converter circuit, brake circuit, and 3-phase inverter circuit into a single module. This leads to a compact main circuit design. IPM, on the other hand, offers an advantage of simple peripheral circuit designing, by use of its built-in control IC. This IC contains gate driving and protection […]

What is a SiC hybrid module?

This is a product that uses a SiC-SBD (Shottky Barrier Diode) as FWD component, with a combination of Si-IGBT. This combination reduces the losses by approximately 25% in comparison with conventional all-silicon chip products. SiC devices are the focus of attention as next-generation semiconductors that offer superior characteristics in areas such as high withstand-voltage, high-temperature, […]

What does IPM mean?

It stands for Intelligent Power Module. An IPM is a module product, based on a 3-phase inverter circuit with a control IC that contains a gate driving circuit and other protection circuits. This product makes it easier to design peripheral circuits than conventional IGBT modules with external driver circuits. The following configurations are possible: 7in1 […]

What does PIM mean?

It stands for Power Integrated Module. A PIM is a module that is composed of a 3-phase rectifier circuit, 3-phase inverter circuit, and brake circuit. It is also called CIB (Converter Inverter Brake).

What is a module?

A module is a package which contains several power semiconductor devices that form a bridge circuit, etc. A modul provides thermal and electrical contact as well as the electrical insulation maintained between the heat-radiation surface and the electric part. For this reason multiple modules can be placed on the same heat sink. Compared to setups […]

What does SiC mean?

It stands for Silicon Carbide. SiC has a wider bandgap width compared to silicon, and is expected to become the next-generation power device material for high-temperature operation, high-speed switching, low power-loss, and high withstand-voltage applications.

What is a RB-IGBT?

It stands for Reverse Blocking Insulated Gate Bipolar Transistor. Reverse-parallel connection of RB-IGBT enables both way switching. It is incorporated in AT-NPC (Advanced T-type Neutral Point Clamped) 3-level inverters, to increase the power conversion efficiency because there are less current passing elements.

What is the difference between an IGBT and a MOSFET?

An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.

Why is FWD required?

Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a […]