What is the V-series of IGBT?

This product series uses our company’s 6th-generation IGBT chip set. This chip generation uses a trench gate structure that forms a three-dimensional gate over the silicon surface. It also contains a field stop structure (FS structure) to improve the characteristic of the element withstand voltage. These technologies made it possible to use a thinner silicon wafer which leads to a lower on-voltage, reduced switching losses, and improved switching speed control, compared to Fuji’s 5th generation IGBT (U-series IGBT).

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