Do current IGBT modules still cause a latch-up?

IGBTs developed in recent years are designed to not cause latch-up within a range of normal usage.

What is the difference between DC short circuit (arm short circuit) and load short circuit?

Short circuit withstand capability in the datasheets for our modules are defined in DC short circuit condition (arm short circuit). In the case of load short circuit, the short circuit occurs during conducting mode of the IGBT, and the larger current than the saturation current may flow into the device.

Why does the maximum voltage in the RBSOA (non-repetitive) graph drop when the current is increased?

If the turn-off breaking current increases, di/dt increases as well and is causing an induced electromotive force L·di/dt due to the internal inductance in the module L. Hence, high voltage will be applied to the IGBT chip and might cause some avalanche breakdown. Therefore maximum voltage needs to be reduced when the current increases.

“What is the difference between E-type and P-type of PrimePACKTM?
Example) 2MBI1400VXB-120E-50, 2MBI1400VXB-120P-50″

“In these two different module types different chips are used. E-type: Standard type P-type: Soft switching type suppressing turn-off surge voltage”

Is the signal of the temperature output terminal TEMP of small IPM analog or digital?

It is an anolog signal.

Is it possible to directly connect the output of the temperature output terminal TEMP of small IPM to the micro processing unit MPU?

The TEMP terminal can directly be connected to the MPU.

If a pull-down resistor is attached to the temperature output terminal TEMP of small IPM, will the accuracy of the TEMP terminal output voltage change?

The accuracy does not change. The TEMP output voltage shows clamping characteristics at room temperature or below. Please attach a pull-down resistor, if linearity of the output voltage is required for temperatures below room temperature.

What is the recommended dead time for an IGBT module and an IPM, respectively?

Fuji recommends a dead time larger than 3 μs for IGBT module. For IPMs dead time should be larger than 1 μs.

Does the value of gate charge QG depends on power supply voltage, current and temperature?

The value of QG does only slightly depend on power supply voltage, current and temperature, hence it is not necessary to consider this dependency in real application.

Is it possible to adjust the dead time within the IPM?

IPMs do not have a dead time setting function. Please set an adequate dead time in the gate signal input from the outside.