Mainly the turn-off loss Eoff will be affected. As –VGE increases, Eoff decreases.
If voltage is applied between C-E while the gate is open, the divided voltage by Cres and Cies is applied to the gate, as well. This may lead to a gate breakdown from overvoltage, or a breakdown by heating from elevated device temperature due to a unstable ON state of the gate. As such, for […]
This is not problematic. Small IPM modules already contain bootstrap diodes and a limiting resistor inside.
Fuji recommends a dead time larger than 3 μs for IGBT module. For IPMs dead time should be larger than 1 μs.
It is a protection circuit, added to suppress a surge voltage between the collector and the emitter.
IGBT gate drive ICs are supplied from many companies including BROADCOM, Renesas Electronics, Texas Instruments, ISAHAYA ELECTRONICS and TOSHIBA. As the ICs contain short-circuit protection and voltage drop protection circuits within the chip, design of the drive circuit will be simplified. An IGBT module evaluation board with mounted drive IC is available. Please download the […]
It is ±10%. However, it is not guaranteed.
A range between -5V and -15V is recommended. With lower –VGE, the turn-off time toff becomes large and the turn-off loss Eoff increases. Additionally, the IGBT may misfire and cause a short-circuit current flow.
“To prevent a short-circuit in the upper and lower arms, it is necessary to set an on-off timing delay between the different arms. During the so called ‘dead time’ period both devices are switched off. For details, refer to Chapter 7.3 of IGBT Module Application Manual.”
Please refer to the Technical Document of "Carrier frequency dependency of control power supply consumption current".
