Are there any measures to prevent misfiring by high dv/dt during the reverse recovery of the FWD?

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Some of the ways to prevent misfiring of an IGBT are as follows:
(1) by adding a capacity component CGE to the area between the gate and emitter
(2) by increasing –VGE
(3) by increasing gate resistance (RG)
The effectiveness of these measures will vary depending on the applicable gate circuit, so please verify thoroughly before applying them. For details, refer to Application Manual Chapter 7-1.4.

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