This is a product that uses a SiC-SBD (Shottky Barrier Diode) as FWD component, with a combination of Si-IGBT. This combination reduces the losses by approximately 25% in comparison with conventional all-silicon chip products. SiC devices are the focus of attention as next-generation semiconductors that offer superior characteristics in areas such as high withstand-voltage, high-temperature, and high-frequency operations.
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