IGBT Modules

It stands for Insulated Gate Bipolar Transistor. It is a voltage-controlled device that has an insulated gate with an oxide insulating film. The gate structure is similar to a MOSFET. It combines the positive characteristics of a MOSFET and bipolar transistor. It is an indispensable component in a power conversion circuit for high-voltage and large-current applications. It is mainly used in consumer equipment such as air conditioners (a/c) or microwave ovens, industrial equipment such as elevators, and inverters for hybrid electric vehicles (HEV) and electric vehicles (EV).

Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.

An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.

It stands for Reverse Blocking Insulated Gate Bipolar Transistor. Reverse-parallel connection of RB-IGBT enables both way switching. It is incorporated in AT-NPC (Advanced T-type Neutral Point Clamped) 3-level inverters, to increase the power conversion efficiency because there are less current passing elements.

It stands for Silicon Carbide. SiC has a wider bandgap width compared to silicon, and is expected to become the next-generation power device material for high-temperature operation, high-speed switching, low power-loss, and high withstand-voltage applications.

A module is a package which contains several power semiconductor devices that form a bridge circuit, etc. A modul provides thermal and electrical contact as well as the electrical insulation maintained between the heat-radiation surface and the electric part. For this reason multiple modules can be placed on the same heat sink. Compared to setups that operate with multiple discrete products, the module can handle a larger current and is superior because it is small, lightweight, and easy to assemble.

It stands for Power Integrated Module. A PIM is a module that is composed of a 3-phase rectifier circuit, 3-phase inverter circuit, and brake circuit. It is also called CIB (Converter Inverter Brake).

It stands for Intelligent Power Module. An IPM is a module product, based on a 3-phase inverter circuit with a control IC that contains a gate driving circuit and other protection circuits. This product makes it easier to design peripheral circuits than conventional IGBT modules with external driver circuits. The following configurations are possible: 7in1 with a brake circuit, and 6in1 without brake circuit.

This is a product that uses a SiC-SBD (Shottky Barrier Diode) as FWD component, with a combination of Si-IGBT. This combination reduces the losses by approximately 25% in comparison with conventional all-silicon chip products. SiC devices are the focus of attention as next-generation semiconductors that offer superior characteristics in areas such as high withstand-voltage, high-temperature, and high-frequency operations.

PIM is a product that integrates a 3-phase converter circuit, brake circuit, and 3-phase inverter circuit into a single module. This leads to a compact main circuit design. IPM, on the other hand, offers an advantage of simple peripheral circuit designing, by use of its built-in control IC. This IC contains gate driving and protection circuits, in addition to brake and inverter circuits.

This product series uses our company's 6th-generation IGBT chip set. This chip generation uses a trench gate structure that forms a three-dimensional gate over the silicon surface. It also contains a field stop structure (FS structure) to improve the characteristic of the element withstand voltage. These technologies made it possible to use a thinner silicon wafer which leads to a lower on-voltage, reduced switching losses, and improved switching speed control, compared to Fuji's 5th generation IGBT (U-series IGBT).

Refer to "Part numbers" in the Semiconductors General Catalog.

Refer to the description of terms in Application Manual Chapter 2-1.

Regarding voltage and current rating, refer to Application Manual Chapter 3-1 on "how to select an IGBT module". Before use, please verify that the voltage, current, temperature, and other factors stay within the maximum rating range. Please contact Fuji Electric Corp. of America or your local sales representative or distributor for support.

Maximum collector-emitter voltage (V_CES) is specified as the maximum rating in the relevant specifications. The voltage should never exceed this value.

The optimum gate resistance value (R_G) varies depending on the circuit configuration or operating environment used. The data sheet describes the recommended resistance value to minimize switching loss. Determine an appropriate gate resistance (R_G) after considering the relevant switching loss, EMC/EMI, surge voltage, and unexpected characteristics such as vibration, without deviating from the descriptions contained in the data sheet.

The gate resistance value (R_G) greatly impacts dv/dt, radiation noise, voltage/current surge, and switching loss. Please comprehensively determine an appropriate value that corresponds to the target figure of your actual design. As for reference, a recommended turn-on resistance value (R_G(on)) is twice or higher than that of the standard value from datasheet, and a recommended turn-off resistance value (R_G(off)) is one to two times that of the standard value.

A surge voltage is generated by high di/dt, and wiring inductance outside the module, at the time of switching (L*di/dt). Some of the ways to suppress this problem are as follows:
(1) Add a protective circuit
(2) Reduce di/dt by adjusting R_G or -V_GE
(3) Reduce inductance by making the main circuit wiring thicker and shorter, and using a copper bar and parallel flat wiring
For details, refer to Application Manual Chapter 5.

"Refer to the data sheet where internal gate resistance (R_G) values for the 6th-generation V-series and 7th-generation X-series IGBT module are described.
Please contact us with a model type number if it is not shown in the 6th-generation data sheet or if it is a product prior to the 6th-generation (U-series, S-series)."

A larger gate resistance (R_G) will increase switching loss, and make it more prone to generating an arm short circuit due to an insufficient dead-time. A smaller gate resistance (R_G)may cause a sudden surge voltage. For details, refer to Application Manual Chapters 2-2.2 and 7-1.3.

Please measure at the main terminal of the product. If a terminal is separately specified for measurement in the data sheet, please use the specified terminal.

An insufficient reverse-bias voltage (-V_GE) between the gate and emitter may cause the IGBT to mis-fire, leading to a short-circuit current. If the current is cut off the surge voltage and the generated loss may damage the product. For details, refer to Application Manual Chapters 4-3.3 and 7-1.2.

Please apply a reverse-bias voltage (-V_GE) of -5 V or higher (-15 V recommended; max. -20 V) between the gate and emitter in the IGBT that is not being used. An insufficient reverse-bias voltage (-V_GE) may cause the IGBT to misfire due to dV/dt at the time of reverse-recovery of the FWD, resulting in damage.
For details, refer to Application Manual Chapter 3-10.

Refer to Application Manual Chapter 7-5. It provides precautions regarding the photo-coupler's noise capability, wiring between the drive circuit and IGBT, and gate overvoltage protection.

The minimum temperature is specified by the storage temperature (T_stg). Please consider that there will be a reduced device withstand voltage and peripheral component (capacitor, control circuit) characteristics under low temperature before use.

Our IPM is designed with a lowest guaranteed operating temperature of T_c=-20^oC. Operation below this temperature has not been evaluated, and any use below -20^oC will void your warranty. At such temperature, there are concerns about possible malfunctions due to a lower device withstand voltage or reduced capacity of the used capacitor.

A lower temperature reduces the IGBT's maximum collector-emitter voltage (V_CES). The data sheet describes the maximum collector-emitter voltage (V_CES) under the condition of T_j=25^oC. Refer to the technical information describing temperature dependency included in the technical documents under Design Support.

Fuji provides a free software to calculate the IGBT losses. The following steps can be followed to obtain the figure.
(1) Download our Loss Simulator
(2) Launch our Loss Simulator
(3) Enter data on the chip series, circuit configuration, voltage rating, and current rating. Select your model type. Click ""Next""
(4) Enter data on the circuit, PWM modulation scheme, and calculation conditions. Click ""Calculate""
(5) The calculation result will be displayed
For details, refer to the user manual.

The IGBT Simulator can estimate the power loss and temperature for a 3-phase 2-level inverter circuit, 3-phase 3-level inverter circuit, and chopper circuit of an IGBT and FWD. It can also calculate loss and temperature under variable inverter operation conditions such as output current and switching frequency. Changes in loss and temperature when the load continuously fluctuates, can also be obtained.

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

Refer to the "Maximum Ratings: Case temperature" section in the data sheet.

Junction temperature can be estimated based on generated losses and thermal resistance R_th(j-c). For details, refer to Application Manual Chapter 6-2.1.
We provide a free software to calculate IGBT's temperature at 2-level inverter, 3-level inverter, and chopper circuits. This software can be downloaded here.

The maximum allowable temperature for the chip during conventional continuous operation is specified in T_j(op). Please ensure the maximum chip temperature stays at or under T_j(op) during conventional continuous operation. The maximum allowable temperature for a chip during short-term overload or abnormal operation is specified inT_j(max).

The following illustrates an example of how to measure case temperature (T_c).
One method is to make a groove on a copper base or a heat sink of an IGBT module to embed a thermocouple. Please fill the groove with highly thermally conductive paste to secure the thermocouple and attain even thermal diffusion.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

No, prior to using an IGBT module, please apply thermal grease (compound) on the surface of a heat sink and module before layering. This will reduce the contact thermal resistance. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Recommended values are 0.92 W/m·K or higher for thermal conductivity, and approximately 100 μm thick after spreading thermal grease. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Refer to Application Manual Chapter 6-3.3 for details.

Thermal grease can be applied using either a roller or stencil mask. An inappropriate thermal grease thickness will negatively affect heat radiation to the heat sink. We strongly recommend using a stencil mask that enables a uniform thickness to be applied over the back surface of the module. For details on application methods, refer to Application Manual Chapter 6-3.3 or Mounting Instruction. An optimum outline drawing for each module is also available. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

While thermal grease promotes thermal conduction to a fin, it has a thermal capacity itself. Applying too much grease will obstruct the heat radiation to fins. At the same time, applying too little will increase the contact thermal resistance because thermal grease will not have good contact in some spots between the fins and module for bonding. For details, refer to Application Manual Chapter 6-3.3 "Thermal paste application" and technical documents.

Guides to flatness values for a heat sink are 50 μm or less for 100 mm between screw mounting locations, and 10 μm or less for surface roughness. An excessive convex warp will cause an insulation breakdown, leading to a critical incident. An excessive concave warp will reduce heat radiation by creating a gap between the product and heat sink, which may lead to thermal destruction.

NTC (Negative Temperature Coefficient Thermistor) is an electronic component whose resistance decreases while the temperature increases.

They are not the same. When incorporating it in an IGBT module, NTC is positioned far from the chip to ensure insulation. This produces a temperature gap between them although NTC's temperature will follow that of chip's T_j.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

I²t is a Joule-integral for overcurrent allowed within the range that does not result in element destruction. Overcurrent is defined in one cycle at commercially restricted half-waves (50, 60 Hz).

The types of power cycle capability include the ΔT_j power cycle (ΔT_j-P/C) capability curve and the ΔT_c power cycle (ΔT_c-P/C) capability curve. We verify device life on two models, therefore please design a product life expectancy within these power cycle capabilities. For details, refer to Application Manual Chapter 11.

In cases where the temperature increases n-times per device operation cycle, we assign a power cycle life expectance count as PC(k=1, 2, 3, ..., n). PC(k) is the power cycle life for the k-th temperature rise. A combined power cycle life expectancy count can be expressed by the formula below.
For details, refer to Application Manual Chapter 11.

IGBT's short-circuit current is impacted by gate-to-emitter voltage V_GE, junction temperature T_j, and switching voltage V_cc. Generally, a short-circuit current increases with a large V_GE, low T_j, and large V_cc.

To prevent a short-circuit in the upper and lower arms, it is necessary to set an on-off timing delay between the several arms. During this time period both devices are switched off. The dead-time needs to be set so that it is generally longer than the switching time of the IGBT (t_off max.).
For details, refer to Application Manual Chapter 7.

One way to determine the validity of the dead-time setting is to verify the current on the direct current power line during non-loading time.
For details, refer to Application Manual Chapter 7.

There is no dependency.

There is no dependency.

There are two types of snubber circuits. The first type is implemented between the DC power supply busbars and is called lump snubber. The second type is called individual snubber ciruit and is connected to each IGBT.
For details, refer to Application Manual Chapter 5.

The necessary capacity for a snubber capacitor can be obtained with the following formula.
For details, refer to Application Manual Chapter 5.

Refer to IGBT module's Application Manual Chapter 6-3 or Mounting Instruction.

Some IGBT module models can be connected in parallel, while other models cannot. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

There are four basic precautions, shown below, when connecting IGBT modules in parallel:
(1) Current unbalance control during steady operation
(2) Current unbalance control at the time of switching
(3) Gate drive circuit
(4) Derating
For details, refer to Application Manual Chapter 4-3.5 and Chapter 8.

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

A simulation model such as a SPICE model is not available.

Product warranty and support are provided if products have been purchased from our distributors or an authorized dealer. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

The desired storage environment has a temperature range of 5 to 35^oC, and humidity range of 45% to 75%. Avoid storage under load, and secure a location with little temperature fluctuation. For details, refer to Application Manual Chapter 3-8.

Avoid soldering under excessive temperature. Soldering condition have to be within specification value. It may result in package degradation. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Some of the ways to prevent misfiring of an IGBT are as follows:
(1) by adding a capacity component C_GE to the area between the gate and emitter
(2) by increasing -V_GE
(3) by increasing gate resistance (R_G)
The effectiveness of these measures will vary depending on the applicable gate circuit, so please verify thoroughly before applying them. For details, refer to Application Manual Chapter 7-1.4.

The piece of black sponge is attached for protection. Please keep the sponge on the module at the time of storage.

You can verify the IGBT by checking the leakage current between G and E, and C and E, using a transistor curve tracer (CT). Simple failure diagnosis can also be done using a voltage, resistance tester in place of a CT. For details, refer to Application Manual Chapter 4-2.

(1) Discharge any static electricity by grounding through a high-capacity resistor, and use a conductive mat that has been grounded
(2) Hold the package body without directly touching the IGBT module terminals (especially control terminal)
(3) Ground tools such as a soldering tip, at an adequately low resistance
(4) Protect a control terminal using conductive material such as IC foam
For details, refer to Application Manual Chapter 3-2.

EMI is an abbreviation of Electro Magnetic Interference. The word describes the negative effect caused on peripheral equipment by an electronic device, and it is also called emission. EMI consists of conductive noise that leaks to a power source, and radiation noise that is emitted as electromagnetic waves. For details, refer to Application Manual Chapter 10.

EMS is an abbreviation of Electro Magnetic Susceptibility. The word describes an electronic device's capability and performance against surrounding interference, and it is also called immunity. It includes evaluation items such as electromagnetic waves, static electricity, and lightning surge. For details, refer to Application Manual Chapter 10.

Fuji Electric Corp. of America began manufacturing IGBTs in 1988, and now has nearly 30 years of history in supplying IGBT products to the market.

Yes. The main factors impacting the IGBT module's life expectancy are temperature gaps involving the element's junction temperature T_j, and increase and decrease of case temperature T_c. Refer to technical documents describing the relationship of ΔT_j and ΔT_c with the device life expectancy.

The first digit represents the year of manufacture, the second digit is the month of manufacture, and the remaining 3 to 4 digits are the lot number.

Pull up the ALM terminal to V_CC to stabilize electric potential.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

Pull up the VinDB terminal to V_CC to stabilize electric potential.

The insulated substrate consists of a ceramic substrate, front-surface copper-foil pattern to create a circuit, and back-surface copper-foil to solder with a copper base. It is designed to electrically insulate between the electric part and the part for thermal dissipation. The ceramic substrate materials used are aluminum oxide, aluminum nitride, silicon nitride, etc.

The switching frequency (carrier frequency) is not defined in specifications. A higher frequency will increase the switching loss, leading to a problem with the junction temperature. The device will be operable under the absolute maximum rated temperature; a frequency of 15 kHz or less should be used for V-series IGBT module. For a welding device or medical equipment it might be necessary to use switching frequencies of 20 kHz or higher, therefore we recommend a high-speed standard 2in1 module or W-series discrete IBGT.

Connectors compatible with V-IPM series terminal shapes (by HIROSE ELECTRIC CO., LTD.) are on the market.
P630: MA49-19S-2.54DSA, MA49-19S-2.54DSA(01)
P631: MDF7-25S-2.54DSA
Please contact HIROSE ELECTRIC CO., LTD. to purchase the relevant connector or verify reliability.

The compatible tab is the 110 series. Please select a tab terminal which has the tab dimensions of 2.8 mm width, and 0.5 mm plate thickness. Relevant products are available on the market from Tyco Electronics Japan G.K., J.S.T. MFG. CO., LTD., and NICHIFU Co., Ltd. Please contact any of these companies for details.

It is a pin type that allows PCB mounting without soldering. It is used in PIM and 6-Pack products. The time required for the assembly process is reduced as connection is completed by pressing an IGBT module over PCB's through-hole and applying pressure from the base side. Special press and press-in tools are required. We do not sell presses or tools.

VDA and VDN use different material for their insulating substrates, resulting in separate thermal resistance values. The VDA type uses aluminum oxide, while the VDN type uses high heat-radiation material, with approximately 30% less thermal resistance than that of VDA. It is effective when achieving a lower T_j max. or longer ΔT_j power cycle life expectancy.

A bootstrap circuit is one that is composed of a control power supply to drive high-side IGBT. It is possible to have a single power supply as it does not require a transformer with multiple secondary windings. Its built-in bootstrap resistance and bootstrap diode (BSD) gives a small IPM to configure a bootstrap circuit simply by adding an external bootstrap capacitor.

IPM V-series input control signal is IGBT-on when set at Low. A small IPM's input control signal is IGBT-on when set at High.

The thermal resistance value may differ even in the same rating, when comparing different families of products made by Fuji Electric or other companies. A low thermal resistance in a certain product may be due to a larger semiconductor chip size, or the use of a ceramic insulating substrate with good thermal conductivity.

1 device represents a value per arm (IGBT+FWD). Some models connect multiple chips per arm in parallel. This parallel-chip configuration is counted as one chip.

It represents an external resistance. It excludes the module's built-in R_G(int).

RBSOA is an abbreviation of Reverse Bias Safety Operating Area. The data sheet contains a characteristic graph describing double the rated voltage and rated current under the condition of maximum continuous operation temperature T_j(op). It illustrates a range of V_CE and I_C where safe operation is maintained when IGBT is turning off. The operation can be repeated within the RBSOA range.

SCSOA is an abbreviation of Short Circuit Safety Operating Area. During an incident with an inverter device, such as a load short-circuit, arm short-circuit, or ground fault, a current that is several times higher than the rated current flows in the IGBT. SCSOA is provided to protect the IGBT even during these instances. SCSOA has different characteristics depending on the generation or withstand voltage of IGBT. Refer to the technical documents of individual models.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

There are two types of noise: conductive noise (noise terminal voltage) and radiation noise. Conductive noise propagates over a conductor or earth wire in a main circuit. It is divided into two groups: normal mode and common mode. Radiation noise is generated within a device and emitted into the air because the device wiring or casing works as an antenna. For details, refer to IGBT's Application Manual Chapter 10.

"Conductive noise can be reduced through methods such as adding an LC filter on the AC power side, adding a ferrite core, or adjusting the gate resistance to suppress dv/dt at the time of switching.
For details, refer to IGBT's Application Manual Chapter 10."

Radiation noise can be reduced through methods such as reducing the loop current area where noise is generated, or adjusting the gate resistance. For details, refer to IGBT's Application Manual Chapter 10.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

A stencil mask is a 200 μm-thick, metal plate with multiple holes punched in the compound application area. A compound can be applied with a uniform thickness of 100 μm when clamping the stencil to a heat sink after application. We do not sell stencil masks but we can provide a mask drawing that corresponds to the relevant package.

It will cause a separation of aluminum wire, or a crack in the solder under the chip. Thermal destruction will result from the current concentrating on the relevant part of the chip, or increased thermal resistance.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

It stands for Insulated Gate Bipolar Transistor. It is a voltage-controlled device that has an insulated gate with an oxide insulating film. The gate structure is similar to a MOSFET. It combines the positive characteristics of a MOSFET and bipolar transistor. It is an indispensable component in a power conversion circuit for high-voltage and large-current applications. It is mainly used in consumer equipment such as air conditioners (a/c) or microwave ovens, industrial equipment such as elevators, and inverters for hybrid electric vehicles (HEV) and electric vehicles (EV).

Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.

It stands for Reverse Blocking Insulated Gate Bipolar Transistor. Reverse-parallel connection of RB-IGBT enables both way switching. It is incorporated in AT-NPC (Advanced T-type Neutral Point Clamped) 3-level inverters, to increase the power conversion efficiency because there are less current passing elements.

Refer to "Part numbers" in the Semiconductors General Catalog.

Maximum collector-emitter voltage (V_CES) is specified as the maximum rating in the relevant specifications. The voltage should never exceed this value.

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

You can verify the IGBT by checking the leakage current between G and E, and C and E, using a transistor curve tracer (CT). Simple failure diagnosis can also be done using a voltage, resistance tester in place of a CT. For details, refer to Application Manual Chapter 4-2.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

The switching frequency (carrier frequency) is not defined in specifications. A higher frequency will increase the switching loss, leading to a problem with the junction temperature. The device will be operable under the absolute maximum rated temperature; a frequency of 15 kHz or less should be used for V-series IGBT module. For a welding device or medical equipment it might be necessary to use switching frequencies of 20 kHz or higher, therefore we recommend a high-speed standard 2in1 module or W-series discrete IBGT.

There are two types of noise: conductive noise (noise terminal voltage) and radiation noise. Conductive noise propagates over a conductor or earth wire in a main circuit. It is divided into two groups: normal mode and common mode. Radiation noise is generated within a device and emitted into the air because the device wiring or casing works as an antenna. For details, refer to IGBT's Application Manual Chapter 10.

"Conductive noise can be reduced through methods such as adding an LC filter on the AC power side, adding a ferrite core, or adjusting the gate resistance to suppress dv/dt at the time of switching.
For details, refer to IGBT's Application Manual Chapter 10."

Radiation noise can be reduced through methods such as reducing the loop current area where noise is generated, or adjusting the gate resistance. For details, refer to IGBT's Application Manual Chapter 10.

It stands for Insulated Gate Bipolar Transistor. It is a voltage-controlled device that has an insulated gate with an oxide insulating film. The gate structure is similar to a MOSFET. It combines the positive characteristics of a MOSFET and bipolar transistor. It is an indispensable component in a power conversion circuit for high-voltage and large-current applications. It is mainly used in consumer equipment such as air conditioners (a/c) or microwave ovens, industrial equipment such as elevators, and inverters for hybrid electric vehicles (HEV) and electric vehicles (EV).

Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.

It stands for Reverse Blocking Insulated Gate Bipolar Transistor. Reverse-parallel connection of RB-IGBT enables both way switching. It is incorporated in AT-NPC (Advanced T-type Neutral Point Clamped) 3-level inverters, to increase the power conversion efficiency because there are less current passing elements.

A module is a package which contains several power semiconductor devices that form a bridge circuit, etc. A modul provides thermal and electrical contact as well as the electrical insulation maintained between the heat-radiation surface and the electric part. For this reason multiple modules can be placed on the same heat sink. Compared to setups that operate with multiple discrete products, the module can handle a larger current and is superior because it is small, lightweight, and easy to assemble.

It stands for Power Integrated Module. A PIM is a module that is composed of a 3-phase rectifier circuit, 3-phase inverter circuit, and brake circuit. It is also called CIB (Converter Inverter Brake).

It stands for Intelligent Power Module. An IPM is a module product, based on a 3-phase inverter circuit with a control IC that contains a gate driving circuit and other protection circuits. This product makes it easier to design peripheral circuits than conventional IGBT modules with external driver circuits. The following configurations are possible: 7in1 with a brake circuit, and 6in1 without brake circuit.

This is a product that uses a SiC-SBD (Shottky Barrier Diode) as FWD component, with a combination of Si-IGBT. This combination reduces the losses by approximately 25% in comparison with conventional all-silicon chip products. SiC devices are the focus of attention as next-generation semiconductors that offer superior characteristics in areas such as high withstand-voltage, high-temperature, and high-frequency operations.

PIM is a product that integrates a 3-phase converter circuit, brake circuit, and 3-phase inverter circuit into a single module. This leads to a compact main circuit design. IPM, on the other hand, offers an advantage of simple peripheral circuit designing, by use of its built-in control IC. This IC contains gate driving and protection circuits, in addition to brake and inverter circuits.

This product series uses our company's 6th-generation IGBT chip set. This chip generation uses a trench gate structure that forms a three-dimensional gate over the silicon surface. It also contains a field stop structure (FS structure) to improve the characteristic of the element withstand voltage. These technologies made it possible to use a thinner silicon wafer which leads to a lower on-voltage, reduced switching losses, and improved switching speed control, compared to Fuji's 5th generation IGBT (U-series IGBT).

Refer to "Part numbers" in the Semiconductors General Catalog.

Refer to the description of terms in Application Manual Chapter 2-1.

Regarding voltage and current rating, refer to Application Manual Chapter 3-1 on "how to select an IGBT module". Before use, please verify that the voltage, current, temperature, and other factors stay within the maximum rating range. Please contact Fuji Electric Corp. of America or your local sales representative or distributor for support.

Maximum collector-emitter voltage (V_CES) is specified as the maximum rating in the relevant specifications. The voltage should never exceed this value.

The optimum gate resistance value (R_G) varies depending on the circuit configuration or operating environment used. The data sheet describes the recommended resistance value to minimize switching loss. Determine an appropriate gate resistance (R_G) after considering the relevant switching loss, EMC/EMI, surge voltage, and unexpected characteristics such as vibration, without deviating from the descriptions contained in the data sheet.

The gate resistance value (R_G) greatly impacts dv/dt, radiation noise, voltage/current surge, and switching loss. Please comprehensively determine an appropriate value that corresponds to the target figure of your actual design. As for reference, a recommended turn-on resistance value (R_G(on)) is twice or higher than that of the standard value from datasheet, and a recommended turn-off resistance value (R_G(off)) is one to two times that of the standard value.

A surge voltage is generated by high di/dt, and wiring inductance outside the module, at the time of switching (L*di/dt). Some of the ways to suppress this problem are as follows:
(1) Add a protective circuit
(2) Reduce di/dt by adjusting R_G or -V_GE
(3) Reduce inductance by making the main circuit wiring thicker and shorter, and using a copper bar and parallel flat wiring
For details, refer to Application Manual Chapter 5.

"Refer to the data sheet where internal gate resistance (R_G) values for the 6th-generation V-series and 7th-generation X-series IGBT module are described.
Please contact us with a model type number if it is not shown in the 6th-generation data sheet or if it is a product prior to the 6th-generation (U-series, S-series)."

A larger gate resistance (R_G) will increase switching loss, and make it more prone to generating an arm short circuit due to an insufficient dead-time. A smaller gate resistance (R_G)may cause a sudden surge voltage. For details, refer to Application Manual Chapters 2-2.2 and 7-1.3.

Please measure at the main terminal of the product. If a terminal is separately specified for measurement in the data sheet, please use the specified terminal.

An insufficient reverse-bias voltage (-V_GE) between the gate and emitter may cause the IGBT to mis-fire, leading to a short-circuit current. If the current is cut off the surge voltage and the generated loss may damage the product. For details, refer to Application Manual Chapters 4-3.3 and 7-1.2.

Please apply a reverse-bias voltage (-V_GE) of -5 V or higher (-15 V recommended; max. -20 V) between the gate and emitter in the IGBT that is not being used. An insufficient reverse-bias voltage (-V_GE) may cause the IGBT to misfire due to dV/dt at the time of reverse-recovery of the FWD, resulting in damage.
For details, refer to Application Manual Chapter 3-10.

Refer to Application Manual Chapter 7-5. It provides precautions regarding the photo-coupler's noise capability, wiring between the drive circuit and IGBT, and gate overvoltage protection.

The minimum temperature is specified by the storage temperature (T_stg). Please consider that there will be a reduced device withstand voltage and peripheral component (capacitor, control circuit) characteristics under low temperature before use.

Our IPM is designed with a lowest guaranteed operating temperature of T_c=-20^oC. Operation below this temperature has not been evaluated, and any use below -20^oC will void your warranty. At such temperature, there are concerns about possible malfunctions due to a lower device withstand voltage or reduced capacity of the used capacitor.

A lower temperature reduces the IGBT's maximum collector-emitter voltage (V_CES). The data sheet describes the maximum collector-emitter voltage (V_CES) under the condition of T_j=25^oC. Refer to the technical information describing temperature dependency included in the technical documents under Design Support.

Fuji provides a free software to calculate the IGBT losses. The following steps can be followed to obtain the figure.
(1) Download our Loss Simulator
(2) Launch our Loss Simulator
(3) Enter data on the chip series, circuit configuration, voltage rating, and current rating. Select your model type. Click ""Next""
(4) Enter data on the circuit, PWM modulation scheme, and calculation conditions. Click ""Calculate""
(5) The calculation result will be displayed
For details, refer to the user manual.

The IGBT Simulator can estimate the power loss and temperature for a 3-phase 2-level inverter circuit, 3-phase 3-level inverter circuit, and chopper circuit of an IGBT and FWD. It can also calculate loss and temperature under variable inverter operation conditions such as output current and switching frequency. Changes in loss and temperature when the load continuously fluctuates, can also be obtained.

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

Refer to the "Maximum Ratings: Case temperature" section in the data sheet.

Junction temperature can be estimated based on generated losses and thermal resistance R_th(j-c). For details, refer to Application Manual Chapter 6-2.1.
We provide a free software to calculate IGBT's temperature at 2-level inverter, 3-level inverter, and chopper circuits. This software can be downloaded here.

The maximum allowable temperature for the chip during conventional continuous operation is specified in T_j(op). Please ensure the maximum chip temperature stays at or under T_j(op) during conventional continuous operation. The maximum allowable temperature for a chip during short-term overload or abnormal operation is specified inT_j(max).

The following illustrates an example of how to measure case temperature (T_c).
One method is to make a groove on a copper base or a heat sink of an IGBT module to embed a thermocouple. Please fill the groove with highly thermally conductive paste to secure the thermocouple and attain even thermal diffusion.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

No, prior to using an IGBT module, please apply thermal grease (compound) on the surface of a heat sink and module before layering. This will reduce the contact thermal resistance. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Recommended values are 0.92 W/m·K or higher for thermal conductivity, and approximately 100 μm thick after spreading thermal grease. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Refer to Application Manual Chapter 6-3.3 for details.

Thermal grease can be applied using either a roller or stencil mask. An inappropriate thermal grease thickness will negatively affect heat radiation to the heat sink. We strongly recommend using a stencil mask that enables a uniform thickness to be applied over the back surface of the module. For details on application methods, refer to Application Manual Chapter 6-3.3 or Mounting Instruction. An optimum outline drawing for each module is also available. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

While thermal grease promotes thermal conduction to a fin, it has a thermal capacity itself. Applying too much grease will obstruct the heat radiation to fins. At the same time, applying too little will increase the contact thermal resistance because thermal grease will not have good contact in some spots between the fins and module for bonding. For details, refer to Application Manual Chapter 6-3.3 "Thermal paste application" and technical documents.

Guides to flatness values for a heat sink are 50 μm or less for 100 mm between screw mounting locations, and 10 μm or less for surface roughness. An excessive convex warp will cause an insulation breakdown, leading to a critical incident. An excessive concave warp will reduce heat radiation by creating a gap between the product and heat sink, which may lead to thermal destruction.

NTC (Negative Temperature Coefficient Thermistor) is an electronic component whose resistance decreases while the temperature increases.

They are not the same. When incorporating it in an IGBT module, NTC is positioned far from the chip to ensure insulation. This produces a temperature gap between them although NTC's temperature will follow that of chip's T_j.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

I²t is a Joule-integral for overcurrent allowed within the range that does not result in element destruction. Overcurrent is defined in one cycle at commercially restricted half-waves (50, 60 Hz).

The types of power cycle capability include the ΔT_j power cycle (ΔT_j-P/C) capability curve and the ΔT_c power cycle (ΔT_c-P/C) capability curve. We verify device life on two models, therefore please design a product life expectancy within these power cycle capabilities. For details, refer to Application Manual Chapter 11.

In cases where the temperature increases n-times per device operation cycle, we assign a power cycle life expectance count as PC(k=1, 2, 3, ..., n). PC(k) is the power cycle life for the k-th temperature rise. A combined power cycle life expectancy count can be expressed by the formula below.
For details, refer to Application Manual Chapter 11.

IGBT's short-circuit current is impacted by gate-to-emitter voltage V_GE, junction temperature T_j, and switching voltage V_cc. Generally, a short-circuit current increases with a large V_GE, low T_j, and large V_cc.

To prevent a short-circuit in the upper and lower arms, it is necessary to set an on-off timing delay between the several arms. During this time period both devices are switched off. The dead-time needs to be set so that it is generally longer than the switching time of the IGBT (t_off max.).
For details, refer to Application Manual Chapter 7.

One way to determine the validity of the dead-time setting is to verify the current on the direct current power line during non-loading time.
For details, refer to Application Manual Chapter 7.

There is no dependency.

There is no dependency.

There are two types of snubber circuits. The first type is implemented between the DC power supply busbars and is called lump snubber. The second type is called individual snubber ciruit and is connected to each IGBT.
For details, refer to Application Manual Chapter 5.

The necessary capacity for a snubber capacitor can be obtained with the following formula.
For details, refer to Application Manual Chapter 5.

Refer to IGBT module's Application Manual Chapter 6-3 or Mounting Instruction.

Some IGBT module models can be connected in parallel, while other models cannot. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

There are four basic precautions, shown below, when connecting IGBT modules in parallel:
(1) Current unbalance control during steady operation
(2) Current unbalance control at the time of switching
(3) Gate drive circuit
(4) Derating
For details, refer to Application Manual Chapter 4-3.5 and Chapter 8.

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

A simulation model such as a SPICE model is not available.

Product warranty and support are provided if products have been purchased from our distributors or an authorized dealer. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

The desired storage environment has a temperature range of 5 to 35^oC, and humidity range of 45% to 75%. Avoid storage under load, and secure a location with little temperature fluctuation. For details, refer to Application Manual Chapter 3-8.

Avoid soldering under excessive temperature. Soldering condition have to be within specification value. It may result in package degradation. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Some of the ways to prevent misfiring of an IGBT are as follows:
(1) by adding a capacity component C_GE to the area between the gate and emitter
(2) by increasing -V_GE
(3) by increasing gate resistance (R_G)
The effectiveness of these measures will vary depending on the applicable gate circuit, so please verify thoroughly before applying them. For details, refer to Application Manual Chapter 7-1.4.

The piece of black sponge is attached for protection. Please keep the sponge on the module at the time of storage.

You can verify the IGBT by checking the leakage current between G and E, and C and E, using a transistor curve tracer (CT). Simple failure diagnosis can also be done using a voltage, resistance tester in place of a CT. For details, refer to Application Manual Chapter 4-2.

(1) Discharge any static electricity by grounding through a high-capacity resistor, and use a conductive mat that has been grounded
(2) Hold the package body without directly touching the IGBT module terminals (especially control terminal)
(3) Ground tools such as a soldering tip, at an adequately low resistance
(4) Protect a control terminal using conductive material such as IC foam
For details, refer to Application Manual Chapter 3-2.

EMI is an abbreviation of Electro Magnetic Interference. The word describes the negative effect caused on peripheral equipment by an electronic device, and it is also called emission. EMI consists of conductive noise that leaks to a power source, and radiation noise that is emitted as electromagnetic waves. For details, refer to Application Manual Chapter 10.

EMS is an abbreviation of Electro Magnetic Susceptibility. The word describes an electronic device's capability and performance against surrounding interference, and it is also called immunity. It includes evaluation items such as electromagnetic waves, static electricity, and lightning surge. For details, refer to Application Manual Chapter 10.

Fuji Electric Corp. of America began manufacturing IGBTs in 1988, and now has nearly 30 years of history in supplying IGBT products to the market.

Yes. The main factors impacting the IGBT module's life expectancy are temperature gaps involving the element's junction temperature T_j, and increase and decrease of case temperature T_c. Refer to technical documents describing the relationship of ΔT_j and ΔT_c with the device life expectancy.

The first digit represents the year of manufacture, the second digit is the month of manufacture, and the remaining 3 to 4 digits are the lot number.

Pull up the ALM terminal to V_CC to stabilize electric potential.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

Pull up the VinDB terminal to V_CC to stabilize electric potential.

The insulated substrate consists of a ceramic substrate, front-surface copper-foil pattern to create a circuit, and back-surface copper-foil to solder with a copper base. It is designed to electrically insulate between the electric part and the part for thermal dissipation. The ceramic substrate materials used are aluminum oxide, aluminum nitride, silicon nitride, etc.

The switching frequency (carrier frequency) is not defined in specifications. A higher frequency will increase the switching loss, leading to a problem with the junction temperature. The device will be operable under the absolute maximum rated temperature; a frequency of 15 kHz or less should be used for V-series IGBT module. For a welding device or medical equipment it might be necessary to use switching frequencies of 20 kHz or higher, therefore we recommend a high-speed standard 2in1 module or W-series discrete IBGT.

Connectors compatible with V-IPM series terminal shapes (by HIROSE ELECTRIC CO., LTD.) are on the market.
P630: MA49-19S-2.54DSA, MA49-19S-2.54DSA(01)
P631: MDF7-25S-2.54DSA
Please contact HIROSE ELECTRIC CO., LTD. to purchase the relevant connector or verify reliability.

The compatible tab is the 110 series. Please select a tab terminal which has the tab dimensions of 2.8 mm width, and 0.5 mm plate thickness. Relevant products are available on the market from Tyco Electronics Japan G.K., J.S.T. MFG. CO., LTD., and NICHIFU Co., Ltd. Please contact any of these companies for details.

It is a pin type that allows PCB mounting without soldering. It is used in PIM and 6-Pack products. The time required for the assembly process is reduced as connection is completed by pressing an IGBT module over PCB's through-hole and applying pressure from the base side. Special press and press-in tools are required. We do not sell presses or tools.

VDA and VDN use different material for their insulating substrates, resulting in separate thermal resistance values. The VDA type uses aluminum oxide, while the VDN type uses high heat-radiation material, with approximately 30% less thermal resistance than that of VDA. It is effective when achieving a lower T_j max. or longer ΔT_j power cycle life expectancy.

A bootstrap circuit is one that is composed of a control power supply to drive high-side IGBT. It is possible to have a single power supply as it does not require a transformer with multiple secondary windings. Its built-in bootstrap resistance and bootstrap diode (BSD) gives a small IPM to configure a bootstrap circuit simply by adding an external bootstrap capacitor.

IPM V-series input control signal is IGBT-on when set at Low. A small IPM's input control signal is IGBT-on when set at High.

The thermal resistance value may differ even in the same rating, when comparing different families of products made by Fuji Electric or other companies. A low thermal resistance in a certain product may be due to a larger semiconductor chip size, or the use of a ceramic insulating substrate with good thermal conductivity.

1 device represents a value per arm (IGBT+FWD). Some models connect multiple chips per arm in parallel. This parallel-chip configuration is counted as one chip.

It represents an external resistance. It excludes the module's built-in R_G(int).

RBSOA is an abbreviation of Reverse Bias Safety Operating Area. The data sheet contains a characteristic graph describing double the rated voltage and rated current under the condition of maximum continuous operation temperature T_j(op). It illustrates a range of V_CE and I_C where safe operation is maintained when IGBT is turning off. The operation can be repeated within the RBSOA range.

SCSOA is an abbreviation of Short Circuit Safety Operating Area. During an incident with an inverter device, such as a load short-circuit, arm short-circuit, or ground fault, a current that is several times higher than the rated current flows in the IGBT. SCSOA is provided to protect the IGBT even during these instances. SCSOA has different characteristics depending on the generation or withstand voltage of IGBT. Refer to the technical documents of individual models.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

There are two types of noise: conductive noise (noise terminal voltage) and radiation noise. Conductive noise propagates over a conductor or earth wire in a main circuit. It is divided into two groups: normal mode and common mode. Radiation noise is generated within a device and emitted into the air because the device wiring or casing works as an antenna. For details, refer to IGBT's Application Manual Chapter 10.

"Conductive noise can be reduced through methods such as adding an LC filter on the AC power side, adding a ferrite core, or adjusting the gate resistance to suppress dv/dt at the time of switching.
For details, refer to IGBT's Application Manual Chapter 10."

Radiation noise can be reduced through methods such as reducing the loop current area where noise is generated, or adjusting the gate resistance. For details, refer to IGBT's Application Manual Chapter 10.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

A stencil mask is a 200 μm-thick, metal plate with multiple holes punched in the compound application area. A compound can be applied with a uniform thickness of 100 μm when clamping the stencil to a heat sink after application. We do not sell stencil masks but we can provide a mask drawing that corresponds to the relevant package.

It will cause a separation of aluminum wire, or a crack in the solder under the chip. Thermal destruction will result from the current concentrating on the relevant part of the chip, or increased thermal resistance.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

You can verify the IGBT by checking the leakage current between G and E, and C and E, using a transistor curve tracer (CT). Simple failure diagnosis can also be done using a voltage, resistance tester in place of a CT. For details, refer to Application Manual Chapter 4-2.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

There are two types of noise: conductive noise (noise terminal voltage) and radiation noise. Conductive noise propagates over a conductor or earth wire in a main circuit. It is divided into two groups: normal mode and common mode. Radiation noise is generated within a device and emitted into the air because the device wiring or casing works as an antenna. For details, refer to IGBT's Application Manual Chapter 10.

"Conductive noise can be reduced through methods such as adding an LC filter on the AC power side, adding a ferrite core, or adjusting the gate resistance to suppress dv/dt at the time of switching.
For details, refer to IGBT's Application Manual Chapter 10."

Radiation noise can be reduced through methods such as reducing the loop current area where noise is generated, or adjusting the gate resistance. For details, refer to IGBT's Application Manual Chapter 10.

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

I²t is a Joule-integral for overcurrent allowed within the range that does not result in element destruction. Overcurrent is defined in one cycle at commercially restricted half-waves (50, 60 Hz).

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

There are two types of noise: conductive noise (noise terminal voltage) and radiation noise. Conductive noise propagates over a conductor or earth wire in a main circuit. It is divided into two groups: normal mode and common mode. Radiation noise is generated within a device and emitted into the air because the device wiring or casing works as an antenna. For details, refer to IGBT's Application Manual Chapter 10.

"Conductive noise can be reduced through methods such as adding an LC filter on the AC power side, adding a ferrite core, or adjusting the gate resistance to suppress dv/dt at the time of switching.
For details, refer to IGBT's Application Manual Chapter 10."

Radiation noise can be reduced through methods such as reducing the loop current area where noise is generated, or adjusting the gate resistance. For details, refer to IGBT's Application Manual Chapter 10.

It stands for Insulated Gate Bipolar Transistor. It is a voltage-controlled device that has an insulated gate with an oxide insulating film. The gate structure is similar to a MOSFET. It combines the positive characteristics of a MOSFET and bipolar transistor. It is an indispensable component in a power conversion circuit for high-voltage and large-current applications. It is mainly used in consumer equipment such as air conditioners (a/c) or microwave ovens, industrial equipment such as elevators, and inverters for hybrid electric vehicles (HEV) and electric vehicles (EV).

Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.

An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.

It stands for Silicon Carbide. SiC has a wider bandgap width compared to silicon, and is expected to become the next-generation power device material for high-temperature operation, high-speed switching, low power-loss, and high withstand-voltage applications.

A module is a package which contains several power semiconductor devices that form a bridge circuit, etc. A modul provides thermal and electrical contact as well as the electrical insulation maintained between the heat-radiation surface and the electric part. For this reason multiple modules can be placed on the same heat sink. Compared to setups that operate with multiple discrete products, the module can handle a larger current and is superior because it is small, lightweight, and easy to assemble.

It stands for Power Integrated Module. A PIM is a module that is composed of a 3-phase rectifier circuit, 3-phase inverter circuit, and brake circuit. It is also called CIB (Converter Inverter Brake).

This is a product that uses a SiC-SBD (Shottky Barrier Diode) as FWD component, with a combination of Si-IGBT. This combination reduces the losses by approximately 25% in comparison with conventional all-silicon chip products. SiC devices are the focus of attention as next-generation semiconductors that offer superior characteristics in areas such as high withstand-voltage, high-temperature, and high-frequency operations.

PIM is a product that integrates a 3-phase converter circuit, brake circuit, and 3-phase inverter circuit into a single module. This leads to a compact main circuit design. IPM, on the other hand, offers an advantage of simple peripheral circuit designing, by use of its built-in control IC. This IC contains gate driving and protection circuits, in addition to brake and inverter circuits.

Refer to "Part numbers" in the Semiconductors General Catalog.

Refer to the description of terms in Application Manual Chapter 2-1.

Regarding voltage and current rating, refer to Application Manual Chapter 3-1 on "how to select an IGBT module". Before use, please verify that the voltage, current, temperature, and other factors stay within the maximum rating range. Please contact Fuji Electric Corp. of America or your local sales representative or distributor for support.

Maximum collector-emitter voltage (V_CES) is specified as the maximum rating in the relevant specifications. The voltage should never exceed this value.

The optimum gate resistance value (R_G) varies depending on the circuit configuration or operating environment used. The data sheet describes the recommended resistance value to minimize switching loss. Determine an appropriate gate resistance (R_G) after considering the relevant switching loss, EMC/EMI, surge voltage, and unexpected characteristics such as vibration, without deviating from the descriptions contained in the data sheet.

The gate resistance value (R_G) greatly impacts dv/dt, radiation noise, voltage/current surge, and switching loss. Please comprehensively determine an appropriate value that corresponds to the target figure of your actual design. As for reference, a recommended turn-on resistance value (R_G(on)) is twice or higher than that of the standard value from datasheet, and a recommended turn-off resistance value (R_G(off)) is one to two times that of the standard value.

A surge voltage is generated by high di/dt, and wiring inductance outside the module, at the time of switching (L*di/dt). Some of the ways to suppress this problem are as follows:
(1) Add a protective circuit
(2) Reduce di/dt by adjusting R_G or -V_GE
(3) Reduce inductance by making the main circuit wiring thicker and shorter, and using a copper bar and parallel flat wiring
For details, refer to Application Manual Chapter 5.

A larger gate resistance (R_G) will increase switching loss, and make it more prone to generating an arm short circuit due to an insufficient dead-time. A smaller gate resistance (R_G)may cause a sudden surge voltage. For details, refer to Application Manual Chapters 2-2.2 and 7-1.3.

Please measure at the main terminal of the product. If a terminal is separately specified for measurement in the data sheet, please use the specified terminal.

An insufficient reverse-bias voltage (-V_GE) between the gate and emitter may cause the IGBT to mis-fire, leading to a short-circuit current. If the current is cut off the surge voltage and the generated loss may damage the product. For details, refer to Application Manual Chapters 4-3.3 and 7-1.2.

Please apply a reverse-bias voltage (-V_GE) of -5 V or higher (-15 V recommended; max. -20 V) between the gate and emitter in the IGBT that is not being used. An insufficient reverse-bias voltage (-V_GE) may cause the IGBT to misfire due to dV/dt at the time of reverse-recovery of the FWD, resulting in damage.
For details, refer to Application Manual Chapter 3-10.

Refer to Application Manual Chapter 7-5. It provides precautions regarding the photo-coupler's noise capability, wiring between the drive circuit and IGBT, and gate overvoltage protection.

The minimum temperature is specified by the storage temperature (T_stg). Please consider that there will be a reduced device withstand voltage and peripheral component (capacitor, control circuit) characteristics under low temperature before use.

A lower temperature reduces the IGBT's maximum collector-emitter voltage (V_CES). The data sheet describes the maximum collector-emitter voltage (V_CES) under the condition of T_j=25^oC. Refer to the technical information describing temperature dependency included in the technical documents under Design Support.

Fuji provides a free software to calculate the IGBT losses. The following steps can be followed to obtain the figure.
(1) Download our Loss Simulator
(2) Launch our Loss Simulator
(3) Enter data on the chip series, circuit configuration, voltage rating, and current rating. Select your model type. Click ""Next""
(4) Enter data on the circuit, PWM modulation scheme, and calculation conditions. Click ""Calculate""
(5) The calculation result will be displayed
For details, refer to the user manual.

The IGBT Simulator can estimate the power loss and temperature for a 3-phase 2-level inverter circuit, 3-phase 3-level inverter circuit, and chopper circuit of an IGBT and FWD. It can also calculate loss and temperature under variable inverter operation conditions such as output current and switching frequency. Changes in loss and temperature when the load continuously fluctuates, can also be obtained.

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

Refer to the "Maximum Ratings: Case temperature" section in the data sheet.

Junction temperature can be estimated based on generated losses and thermal resistance R_th(j-c). For details, refer to Application Manual Chapter 6-2.1.
We provide a free software to calculate IGBT's temperature at 2-level inverter, 3-level inverter, and chopper circuits. This software can be downloaded here.

The maximum allowable temperature for the chip during conventional continuous operation is specified in T_j(op). Please ensure the maximum chip temperature stays at or under T_j(op) during conventional continuous operation. The maximum allowable temperature for a chip during short-term overload or abnormal operation is specified inT_j(max).

The following illustrates an example of how to measure case temperature (T_c).
One method is to make a groove on a copper base or a heat sink of an IGBT module to embed a thermocouple. Please fill the groove with highly thermally conductive paste to secure the thermocouple and attain even thermal diffusion.

No, prior to using an IGBT module, please apply thermal grease (compound) on the surface of a heat sink and module before layering. This will reduce the contact thermal resistance. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Recommended values are 0.92 W/m·K or higher for thermal conductivity, and approximately 100 μm thick after spreading thermal grease. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Refer to Application Manual Chapter 6-3.3 for details.

Thermal grease can be applied using either a roller or stencil mask. An inappropriate thermal grease thickness will negatively affect heat radiation to the heat sink. We strongly recommend using a stencil mask that enables a uniform thickness to be applied over the back surface of the module. For details on application methods, refer to Application Manual Chapter 6-3.3 or Mounting Instruction. An optimum outline drawing for each module is also available. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

While thermal grease promotes thermal conduction to a fin, it has a thermal capacity itself. Applying too much grease will obstruct the heat radiation to fins. At the same time, applying too little will increase the contact thermal resistance because thermal grease will not have good contact in some spots between the fins and module for bonding. For details, refer to Application Manual Chapter 6-3.3 "Thermal paste application" and technical documents.

Guides to flatness values for a heat sink are 50 μm or less for 100 mm between screw mounting locations, and 10 μm or less for surface roughness. An excessive convex warp will cause an insulation breakdown, leading to a critical incident. An excessive concave warp will reduce heat radiation by creating a gap between the product and heat sink, which may lead to thermal destruction.

NTC (Negative Temperature Coefficient Thermistor) is an electronic component whose resistance decreases while the temperature increases.

They are not the same. When incorporating it in an IGBT module, NTC is positioned far from the chip to ensure insulation. This produces a temperature gap between them although NTC's temperature will follow that of chip's T_j.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

I²t is a Joule-integral for overcurrent allowed within the range that does not result in element destruction. Overcurrent is defined in one cycle at commercially restricted half-waves (50, 60 Hz).

The types of power cycle capability include the ΔT_j power cycle (ΔT_j-P/C) capability curve and the ΔT_c power cycle (ΔT_c-P/C) capability curve. We verify device life on two models, therefore please design a product life expectancy within these power cycle capabilities. For details, refer to Application Manual Chapter 11.

In cases where the temperature increases n-times per device operation cycle, we assign a power cycle life expectance count as PC(k=1, 2, 3, ..., n). PC(k) is the power cycle life for the k-th temperature rise. A combined power cycle life expectancy count can be expressed by the formula below.
For details, refer to Application Manual Chapter 11.

IGBT's short-circuit current is impacted by gate-to-emitter voltage V_GE, junction temperature T_j, and switching voltage V_cc. Generally, a short-circuit current increases with a large V_GE, low T_j, and large V_cc.

To prevent a short-circuit in the upper and lower arms, it is necessary to set an on-off timing delay between the several arms. During this time period both devices are switched off. The dead-time needs to be set so that it is generally longer than the switching time of the IGBT (t_off max.).
For details, refer to Application Manual Chapter 7.

One way to determine the validity of the dead-time setting is to verify the current on the direct current power line during non-loading time.
For details, refer to Application Manual Chapter 7.

There is no dependency.

There is no dependency.

There are two types of snubber circuits. The first type is implemented between the DC power supply busbars and is called lump snubber. The second type is called individual snubber ciruit and is connected to each IGBT.
For details, refer to Application Manual Chapter 5.

The necessary capacity for a snubber capacitor can be obtained with the following formula.
For details, refer to Application Manual Chapter 5.

Refer to IGBT module's Application Manual Chapter 6-3 or Mounting Instruction.

Some IGBT module models can be connected in parallel, while other models cannot. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

There are four basic precautions, shown below, when connecting IGBT modules in parallel:
(1) Current unbalance control during steady operation
(2) Current unbalance control at the time of switching
(3) Gate drive circuit
(4) Derating
For details, refer to Application Manual Chapter 4-3.5 and Chapter 8.

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

A simulation model such as a SPICE model is not available.

Product warranty and support are provided if products have been purchased from our distributors or an authorized dealer. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

The desired storage environment has a temperature range of 5 to 35^oC, and humidity range of 45% to 75%. Avoid storage under load, and secure a location with little temperature fluctuation. For details, refer to Application Manual Chapter 3-8.

Avoid soldering under excessive temperature. Soldering condition have to be within specification value. It may result in package degradation. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Some of the ways to prevent misfiring of an IGBT are as follows:
(1) by adding a capacity component C_GE to the area between the gate and emitter
(2) by increasing -V_GE
(3) by increasing gate resistance (R_G)
The effectiveness of these measures will vary depending on the applicable gate circuit, so please verify thoroughly before applying them. For details, refer to Application Manual Chapter 7-1.4.

The piece of black sponge is attached for protection. Please keep the sponge on the module at the time of storage.

You can verify the IGBT by checking the leakage current between G and E, and C and E, using a transistor curve tracer (CT). Simple failure diagnosis can also be done using a voltage, resistance tester in place of a CT. For details, refer to Application Manual Chapter 4-2.

(1) Discharge any static electricity by grounding through a high-capacity resistor, and use a conductive mat that has been grounded
(2) Hold the package body without directly touching the IGBT module terminals (especially control terminal)
(3) Ground tools such as a soldering tip, at an adequately low resistance
(4) Protect a control terminal using conductive material such as IC foam
For details, refer to Application Manual Chapter 3-2.

EMI is an abbreviation of Electro Magnetic Interference. The word describes the negative effect caused on peripheral equipment by an electronic device, and it is also called emission. EMI consists of conductive noise that leaks to a power source, and radiation noise that is emitted as electromagnetic waves. For details, refer to Application Manual Chapter 10.

EMS is an abbreviation of Electro Magnetic Susceptibility. The word describes an electronic device's capability and performance against surrounding interference, and it is also called immunity. It includes evaluation items such as electromagnetic waves, static electricity, and lightning surge. For details, refer to Application Manual Chapter 10.

Yes. The main factors impacting the IGBT module's life expectancy are temperature gaps involving the element's junction temperature T_j, and increase and decrease of case temperature T_c. Refer to technical documents describing the relationship of ΔT_j and ΔT_c with the device life expectancy.

The first digit represents the year of manufacture, the second digit is the month of manufacture, and the remaining 3 to 4 digits are the lot number.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

There are two types of noise: conductive noise (noise terminal voltage) and radiation noise. Conductive noise propagates over a conductor or earth wire in a main circuit. It is divided into two groups: normal mode and common mode. Radiation noise is generated within a device and emitted into the air because the device wiring or casing works as an antenna. For details, refer to IGBT's Application Manual Chapter 10.

"Conductive noise can be reduced through methods such as adding an LC filter on the AC power side, adding a ferrite core, or adjusting the gate resistance to suppress dv/dt at the time of switching.
For details, refer to IGBT's Application Manual Chapter 10."

Radiation noise can be reduced through methods such as reducing the loop current area where noise is generated, or adjusting the gate resistance. For details, refer to IGBT's Application Manual Chapter 10.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Refer to "Part numbers" in the Semiconductors General Catalog.

Refer to the description of terms in Application Manual Chapter 2-1.

Maximum collector-emitter voltage (V_CES) is specified as the maximum rating in the relevant specifications. The voltage should never exceed this value.

The optimum gate resistance value (R_G) varies depending on the circuit configuration or operating environment used. The data sheet describes the recommended resistance value to minimize switching loss. Determine an appropriate gate resistance (R_G) after considering the relevant switching loss, EMC/EMI, surge voltage, and unexpected characteristics such as vibration, without deviating from the descriptions contained in the data sheet.

"Refer to the data sheet where internal gate resistance (R_G) values for the 6th-generation V-series and 7th-generation X-series IGBT module are described.
Please contact us with a model type number if it is not shown in the 6th-generation data sheet or if it is a product prior to the 6th-generation (U-series, S-series)."

Please measure at the main terminal of the product. If a terminal is separately specified for measurement in the data sheet, please use the specified terminal.

The minimum temperature is specified by the storage temperature (T_stg). Please consider that there will be a reduced device withstand voltage and peripheral component (capacitor, control circuit) characteristics under low temperature before use.

Our IPM is designed with a lowest guaranteed operating temperature of T_c=-20^oC. Operation below this temperature has not been evaluated, and any use below -20^oC will void your warranty. At such temperature, there are concerns about possible malfunctions due to a lower device withstand voltage or reduced capacity of the used capacitor.

A lower temperature reduces the IGBT's maximum collector-emitter voltage (V_CES). The data sheet describes the maximum collector-emitter voltage (V_CES) under the condition of T_j=25^oC. Refer to the technical information describing temperature dependency included in the technical documents under Design Support.

Junction temperature is the temperature at joints on a semiconductor chip.

Refer to the "Maximum Ratings: Case temperature" section in the data sheet.

The maximum allowable temperature for the chip during conventional continuous operation is specified in T_j(op). Please ensure the maximum chip temperature stays at or under T_j(op) during conventional continuous operation. The maximum allowable temperature for a chip during short-term overload or abnormal operation is specified inT_j(max).

To prevent a short-circuit in the upper and lower arms, it is necessary to set an on-off timing delay between the several arms. During this time period both devices are switched off. The dead-time needs to be set so that it is generally longer than the switching time of the IGBT (t_off max.).
For details, refer to Application Manual Chapter 7.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

The thermal resistance value may differ even in the same rating, when comparing different families of products made by Fuji Electric or other companies. A low thermal resistance in a certain product may be due to a larger semiconductor chip size, or the use of a ceramic insulating substrate with good thermal conductivity.

1 device represents a value per arm (IGBT+FWD). Some models connect multiple chips per arm in parallel. This parallel-chip configuration is counted as one chip.

It represents an external resistance. It excludes the module's built-in R_G(int).

RBSOA is an abbreviation of Reverse Bias Safety Operating Area. The data sheet contains a characteristic graph describing double the rated voltage and rated current under the condition of maximum continuous operation temperature T_j(op). It illustrates a range of V_CE and I_C where safe operation is maintained when IGBT is turning off. The operation can be repeated within the RBSOA range.

It stands for Insulated Gate Bipolar Transistor. It is a voltage-controlled device that has an insulated gate with an oxide insulating film. The gate structure is similar to a MOSFET. It combines the positive characteristics of a MOSFET and bipolar transistor. It is an indispensable component in a power conversion circuit for high-voltage and large-current applications. It is mainly used in consumer equipment such as air conditioners (a/c) or microwave ovens, industrial equipment such as elevators, and inverters for hybrid electric vehicles (HEV) and electric vehicles (EV).

Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.

An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.

It stands for Reverse Blocking Insulated Gate Bipolar Transistor. Reverse-parallel connection of RB-IGBT enables both way switching. It is incorporated in AT-NPC (Advanced T-type Neutral Point Clamped) 3-level inverters, to increase the power conversion efficiency because there are less current passing elements.

It stands for Silicon Carbide. SiC has a wider bandgap width compared to silicon, and is expected to become the next-generation power device material for high-temperature operation, high-speed switching, low power-loss, and high withstand-voltage applications.

A module is a package which contains several power semiconductor devices that form a bridge circuit, etc. A modul provides thermal and electrical contact as well as the electrical insulation maintained between the heat-radiation surface and the electric part. For this reason multiple modules can be placed on the same heat sink. Compared to setups that operate with multiple discrete products, the module can handle a larger current and is superior because it is small, lightweight, and easy to assemble.

It stands for Power Integrated Module. A PIM is a module that is composed of a 3-phase rectifier circuit, 3-phase inverter circuit, and brake circuit. It is also called CIB (Converter Inverter Brake).

It stands for Intelligent Power Module. An IPM is a module product, based on a 3-phase inverter circuit with a control IC that contains a gate driving circuit and other protection circuits. This product makes it easier to design peripheral circuits than conventional IGBT modules with external driver circuits. The following configurations are possible: 7in1 with a brake circuit, and 6in1 without brake circuit.

This is a product that uses a SiC-SBD (Shottky Barrier Diode) as FWD component, with a combination of Si-IGBT. This combination reduces the losses by approximately 25% in comparison with conventional all-silicon chip products. SiC devices are the focus of attention as next-generation semiconductors that offer superior characteristics in areas such as high withstand-voltage, high-temperature, and high-frequency operations.

PIM is a product that integrates a 3-phase converter circuit, brake circuit, and 3-phase inverter circuit into a single module. This leads to a compact main circuit design. IPM, on the other hand, offers an advantage of simple peripheral circuit designing, by use of its built-in control IC. This IC contains gate driving and protection circuits, in addition to brake and inverter circuits.

This product series uses our company's 6th-generation IGBT chip set. This chip generation uses a trench gate structure that forms a three-dimensional gate over the silicon surface. It also contains a field stop structure (FS structure) to improve the characteristic of the element withstand voltage. These technologies made it possible to use a thinner silicon wafer which leads to a lower on-voltage, reduced switching losses, and improved switching speed control, compared to Fuji's 5th generation IGBT (U-series IGBT).

Refer to "Part numbers" in the Semiconductors General Catalog.

Refer to the description of terms in Application Manual Chapter 2-1.

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

The maximum allowable temperature for the chip during conventional continuous operation is specified in T_j(op). Please ensure the maximum chip temperature stays at or under T_j(op) during conventional continuous operation. The maximum allowable temperature for a chip during short-term overload or abnormal operation is specified inT_j(max).

NTC (Negative Temperature Coefficient Thermistor) is an electronic component whose resistance decreases while the temperature increases.

I²t is a Joule-integral for overcurrent allowed within the range that does not result in element destruction. Overcurrent is defined in one cycle at commercially restricted half-waves (50, 60 Hz).

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

EMI is an abbreviation of Electro Magnetic Interference. The word describes the negative effect caused on peripheral equipment by an electronic device, and it is also called emission. EMI consists of conductive noise that leaks to a power source, and radiation noise that is emitted as electromagnetic waves. For details, refer to Application Manual Chapter 10.

EMS is an abbreviation of Electro Magnetic Susceptibility. The word describes an electronic device's capability and performance against surrounding interference, and it is also called immunity. It includes evaluation items such as electromagnetic waves, static electricity, and lightning surge. For details, refer to Application Manual Chapter 10.

Fuji Electric Corp. of America began manufacturing IGBTs in 1988, and now has nearly 30 years of history in supplying IGBT products to the market.

The insulated substrate consists of a ceramic substrate, front-surface copper-foil pattern to create a circuit, and back-surface copper-foil to solder with a copper base. It is designed to electrically insulate between the electric part and the part for thermal dissipation. The ceramic substrate materials used are aluminum oxide, aluminum nitride, silicon nitride, etc.

It is a pin type that allows PCB mounting without soldering. It is used in PIM and 6-Pack products. The time required for the assembly process is reduced as connection is completed by pressing an IGBT module over PCB's through-hole and applying pressure from the base side. Special press and press-in tools are required. We do not sell presses or tools.

VDA and VDN use different material for their insulating substrates, resulting in separate thermal resistance values. The VDA type uses aluminum oxide, while the VDN type uses high heat-radiation material, with approximately 30% less thermal resistance than that of VDA. It is effective when achieving a lower T_j max. or longer ΔT_j power cycle life expectancy.

A bootstrap circuit is one that is composed of a control power supply to drive high-side IGBT. It is possible to have a single power supply as it does not require a transformer with multiple secondary windings. Its built-in bootstrap resistance and bootstrap diode (BSD) gives a small IPM to configure a bootstrap circuit simply by adding an external bootstrap capacitor.

IPM V-series input control signal is IGBT-on when set at Low. A small IPM's input control signal is IGBT-on when set at High.

1 device represents a value per arm (IGBT+FWD). Some models connect multiple chips per arm in parallel. This parallel-chip configuration is counted as one chip.

RBSOA is an abbreviation of Reverse Bias Safety Operating Area. The data sheet contains a characteristic graph describing double the rated voltage and rated current under the condition of maximum continuous operation temperature T_j(op). It illustrates a range of V_CE and I_C where safe operation is maintained when IGBT is turning off. The operation can be repeated within the RBSOA range.

SCSOA is an abbreviation of Short Circuit Safety Operating Area. During an incident with an inverter device, such as a load short-circuit, arm short-circuit, or ground fault, a current that is several times higher than the rated current flows in the IGBT. SCSOA is provided to protect the IGBT even during these instances. SCSOA has different characteristics depending on the generation or withstand voltage of IGBT. Refer to the technical documents of individual models.

There are two types of noise: conductive noise (noise terminal voltage) and radiation noise. Conductive noise propagates over a conductor or earth wire in a main circuit. It is divided into two groups: normal mode and common mode. Radiation noise is generated within a device and emitted into the air because the device wiring or casing works as an antenna. For details, refer to IGBT's Application Manual Chapter 10.

"Conductive noise can be reduced through methods such as adding an LC filter on the AC power side, adding a ferrite core, or adjusting the gate resistance to suppress dv/dt at the time of switching.
For details, refer to IGBT's Application Manual Chapter 10."

Radiation noise can be reduced through methods such as reducing the loop current area where noise is generated, or adjusting the gate resistance. For details, refer to IGBT's Application Manual Chapter 10.

The optimum gate resistance value (R_G) varies depending on the circuit configuration or operating environment used. The data sheet describes the recommended resistance value to minimize switching loss. Determine an appropriate gate resistance (R_G) after considering the relevant switching loss, EMC/EMI, surge voltage, and unexpected characteristics such as vibration, without deviating from the descriptions contained in the data sheet.

The gate resistance value (R_G) greatly impacts dv/dt, radiation noise, voltage/current surge, and switching loss. Please comprehensively determine an appropriate value that corresponds to the target figure of your actual design. As for reference, a recommended turn-on resistance value (R_G(on)) is twice or higher than that of the standard value from datasheet, and a recommended turn-off resistance value (R_G(off)) is one to two times that of the standard value.

A surge voltage is generated by high di/dt, and wiring inductance outside the module, at the time of switching (L*di/dt). Some of the ways to suppress this problem are as follows:
(1) Add a protective circuit
(2) Reduce di/dt by adjusting R_G or -V_GE
(3) Reduce inductance by making the main circuit wiring thicker and shorter, and using a copper bar and parallel flat wiring
For details, refer to Application Manual Chapter 5.

"Refer to the data sheet where internal gate resistance (R_G) values for the 6th-generation V-series and 7th-generation X-series IGBT module are described.
Please contact us with a model type number if it is not shown in the 6th-generation data sheet or if it is a product prior to the 6th-generation (U-series, S-series)."

A larger gate resistance (R_G) will increase switching loss, and make it more prone to generating an arm short circuit due to an insufficient dead-time. A smaller gate resistance (R_G)may cause a sudden surge voltage. For details, refer to Application Manual Chapters 2-2.2 and 7-1.3.

An insufficient reverse-bias voltage (-V_GE) between the gate and emitter may cause the IGBT to mis-fire, leading to a short-circuit current. If the current is cut off the surge voltage and the generated loss may damage the product. For details, refer to Application Manual Chapters 4-3.3 and 7-1.2.

Please apply a reverse-bias voltage (-V_GE) of -5 V or higher (-15 V recommended; max. -20 V) between the gate and emitter in the IGBT that is not being used. An insufficient reverse-bias voltage (-V_GE) may cause the IGBT to misfire due to dV/dt at the time of reverse-recovery of the FWD, resulting in damage.
For details, refer to Application Manual Chapter 3-10.

Refer to Application Manual Chapter 7-5. It provides precautions regarding the photo-coupler's noise capability, wiring between the drive circuit and IGBT, and gate overvoltage protection.

IGBT's short-circuit current is impacted by gate-to-emitter voltage V_GE, junction temperature T_j, and switching voltage V_cc. Generally, a short-circuit current increases with a large V_GE, low T_j, and large V_cc.

To prevent a short-circuit in the upper and lower arms, it is necessary to set an on-off timing delay between the several arms. During this time period both devices are switched off. The dead-time needs to be set so that it is generally longer than the switching time of the IGBT (t_off max.).
For details, refer to Application Manual Chapter 7.

One way to determine the validity of the dead-time setting is to verify the current on the direct current power line during non-loading time.
For details, refer to Application Manual Chapter 7.

There are four basic precautions, shown below, when connecting IGBT modules in parallel:
(1) Current unbalance control during steady operation
(2) Current unbalance control at the time of switching
(3) Gate drive circuit
(4) Derating
For details, refer to Application Manual Chapter 4-3.5 and Chapter 8.

Some of the ways to prevent misfiring of an IGBT are as follows:
(1) by adding a capacity component C_GE to the area between the gate and emitter
(2) by increasing -V_GE
(3) by increasing gate resistance (R_G)
The effectiveness of these measures will vary depending on the applicable gate circuit, so please verify thoroughly before applying them. For details, refer to Application Manual Chapter 7-1.4.

It represents an external resistance. It excludes the module's built-in R_G(int).

The semiconductor products of Fuji Electric Corp. of America are manufactured at its six sites in Japan (including Matsumoto Factory, Yamanashi Factory, Fuji Electric Power Semiconductor Co., Ltd., and Fuji Electric Tsugaru Semiconductor Co., Ltd.), and three overseas sites (Fuji Electric (ShenZhen) Co., Ltd., Fuji Electric Philippines, Inc., and Fuji Electric (Malaysia) Sdn. Bhd.).

Product warranty and support are provided if products have been purchased from our distributors or an authorized dealer. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Fuji Electric Corp. of America began manufacturing IGBTs in 1988, and now has nearly 30 years of history in supplying IGBT products to the market.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

No, prior to using an IGBT module, please apply thermal grease (compound) on the surface of a heat sink and module before layering. This will reduce the contact thermal resistance. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Thermal grease can be applied using either a roller or stencil mask. An inappropriate thermal grease thickness will negatively affect heat radiation to the heat sink. We strongly recommend using a stencil mask that enables a uniform thickness to be applied over the back surface of the module. For details on application methods, refer to Application Manual Chapter 6-3.3 or Mounting Instruction. An optimum outline drawing for each module is also available. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

The types of power cycle capability include the ΔT_j power cycle (ΔT_j-P/C) capability curve and the ΔT_c power cycle (ΔT_c-P/C) capability curve. We verify device life on two models, therefore please design a product life expectancy within these power cycle capabilities. For details, refer to Application Manual Chapter 11.

In cases where the temperature increases n-times per device operation cycle, we assign a power cycle life expectance count as PC(k=1, 2, 3, ..., n). PC(k) is the power cycle life for the k-th temperature rise. A combined power cycle life expectancy count can be expressed by the formula below.
For details, refer to Application Manual Chapter 11.

Fuji Electric Corp. of America enforces the same quality standard for product management at all locations, regardless of where the manufacturing sites are.

The desired storage environment has a temperature range of 5 to 35^oC, and humidity range of 45% to 75%. Avoid storage under load, and secure a location with little temperature fluctuation. For details, refer to Application Manual Chapter 3-8.

The piece of black sponge is attached for protection. Please keep the sponge on the module at the time of storage.

Yes. The main factors impacting the IGBT module's life expectancy are temperature gaps involving the element's junction temperature T_j, and increase and decrease of case temperature T_c. Refer to technical documents describing the relationship of ΔT_j and ΔT_c with the device life expectancy.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Power semiconductor modules of Fuji Electric Corp. of America have been certified with UL standard 1557, category code QQQX2 (File No. E82988). The relevant model types can be found on the UL website's (http://japan.ul.com/) Online Certifications Directory.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

It will cause a separation of aluminum wire, or a crack in the solder under the chip. Thermal destruction will result from the current concentrating on the relevant part of the chip, or increased thermal resistance.

Fuji provides a free software to calculate the IGBT losses. The following steps can be followed to obtain the figure.
(1) Download our Loss Simulator
(2) Launch our Loss Simulator
(3) Enter data on the chip series, circuit configuration, voltage rating, and current rating. Select your model type. Click ""Next""
(4) Enter data on the circuit, PWM modulation scheme, and calculation conditions. Click ""Calculate""
(5) The calculation result will be displayed
For details, refer to the user manual.

The IGBT Simulator can estimate the power loss and temperature for a 3-phase 2-level inverter circuit, 3-phase 3-level inverter circuit, and chopper circuit of an IGBT and FWD. It can also calculate loss and temperature under variable inverter operation conditions such as output current and switching frequency. Changes in loss and temperature when the load continuously fluctuates, can also be obtained.

Junction temperature can be estimated based on generated losses and thermal resistance R_th(j-c). For details, refer to Application Manual Chapter 6-2.1.
We provide a free software to calculate IGBT's temperature at 2-level inverter, 3-level inverter, and chopper circuits. This software can be downloaded here.

A simulation model such as a SPICE model is not available.

The minimum temperature is specified by the storage temperature (T_stg). Please consider that there will be a reduced device withstand voltage and peripheral component (capacitor, control circuit) characteristics under low temperature before use.

Fuji provides a free software to calculate the IGBT losses. The following steps can be followed to obtain the figure.
(1) Download our Loss Simulator
(2) Launch our Loss Simulator
(3) Enter data on the chip series, circuit configuration, voltage rating, and current rating. Select your model type. Click ""Next""
(4) Enter data on the circuit, PWM modulation scheme, and calculation conditions. Click ""Calculate""
(5) The calculation result will be displayed
For details, refer to the user manual.

Junction temperature is the temperature at joints on a semiconductor chip.

Case temperature (T_c) is the temperature on the module copper base surface right under a semiconductor chip where the temperature is the highest.

Refer to the "Maximum Ratings: Case temperature" section in the data sheet.

Junction temperature can be estimated based on generated losses and thermal resistance R_th(j-c). For details, refer to Application Manual Chapter 6-2.1.
We provide a free software to calculate IGBT's temperature at 2-level inverter, 3-level inverter, and chopper circuits. This software can be downloaded here.

The maximum allowable temperature for the chip during conventional continuous operation is specified in T_j(op). Please ensure the maximum chip temperature stays at or under T_j(op) during conventional continuous operation. The maximum allowable temperature for a chip during short-term overload or abnormal operation is specified inT_j(max).

The following illustrates an example of how to measure case temperature (T_c).
One method is to make a groove on a copper base or a heat sink of an IGBT module to embed a thermocouple. Please fill the groove with highly thermally conductive paste to secure the thermocouple and attain even thermal diffusion.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

No, prior to using an IGBT module, please apply thermal grease (compound) on the surface of a heat sink and module before layering. This will reduce the contact thermal resistance. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Recommended values are 0.92 W/m·K or higher for thermal conductivity, and approximately 100 μm thick after spreading thermal grease. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.

Refer to Application Manual Chapter 6-3.3 for details.

Thermal grease can be applied using either a roller or stencil mask. An inappropriate thermal grease thickness will negatively affect heat radiation to the heat sink. We strongly recommend using a stencil mask that enables a uniform thickness to be applied over the back surface of the module. For details on application methods, refer to Application Manual Chapter 6-3.3 or Mounting Instruction. An optimum outline drawing for each module is also available. Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

While thermal grease promotes thermal conduction to a fin, it has a thermal capacity itself. Applying too much grease will obstruct the heat radiation to fins. At the same time, applying too little will increase the contact thermal resistance because thermal grease will not have good contact in some spots between the fins and module for bonding. For details, refer to Application Manual Chapter 6-3.3 "Thermal paste application" and technical documents.

Guides to flatness values for a heat sink are 50 μm or less for 100 mm between screw mounting locations, and 10 μm or less for surface roughness. An excessive convex warp will cause an insulation breakdown, leading to a critical incident. An excessive concave warp will reduce heat radiation by creating a gap between the product and heat sink, which may lead to thermal destruction.

They are not the same. When incorporating it in an IGBT module, NTC is positioned far from the chip to ensure insulation. This produces a temperature gap between them although NTC's temperature will follow that of chip's T_j.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

In cases where the temperature increases n-times per device operation cycle, we assign a power cycle life expectance count as PC(k=1, 2, 3, ..., n). PC(k) is the power cycle life for the k-th temperature rise. A combined power cycle life expectancy count can be expressed by the formula below.
For details, refer to Application Manual Chapter 11.

Refer to IGBT module's Application Manual Chapter 6-3 or Mounting Instruction.

The thermal resistance value may differ even in the same rating, when comparing different families of products made by Fuji Electric or other companies. A low thermal resistance in a certain product may be due to a larger semiconductor chip size, or the use of a ceramic insulating substrate with good thermal conductivity.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

A stencil mask is a 200 μm-thick, metal plate with multiple holes punched in the compound application area. A compound can be applied with a uniform thickness of 100 μm when clamping the stencil to a heat sink after application. We do not sell stencil masks but we can provide a mask drawing that corresponds to the relevant package.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

Conventional IGBT elements are not capable of blocking a reverse-withstand voltage. When an inverter circuit is used to drive an inductive load like in a motor, the load current will continue flowing in the reverse direction (emitter to collector) at the time of switching. This may damage the IGBT. The IGBT is protected by a commutating load current in a diode (freewheeling diode: FWD) connected inversely in parallel.

An IGBT is a device that has a basic structure of a P-layer added to the drain side of a MOSFET. An IGBT is suited for large-current and high withstand-voltage applications. A MOSFET is suited for small-capacity and high-speed switching applications.

PIM is a product that integrates a 3-phase converter circuit, brake circuit, and 3-phase inverter circuit into a single module. This leads to a compact main circuit design. IPM, on the other hand, offers an advantage of simple peripheral circuit designing, by use of its built-in control IC. This IC contains gate driving and protection circuits, in addition to brake and inverter circuits.

Regarding voltage and current rating, refer to Application Manual Chapter 3-1 on "how to select an IGBT module". Before use, please verify that the voltage, current, temperature, and other factors stay within the maximum rating range. Please contact Fuji Electric Corp. of America or your local sales representative or distributor for support.

Maximum collector-emitter voltage (V_CES) is specified as the maximum rating in the relevant specifications. The voltage should never exceed this value.

The optimum gate resistance value (R_G) varies depending on the circuit configuration or operating environment used. The data sheet describes the recommended resistance value to minimize switching loss. Determine an appropriate gate resistance (R_G) after considering the relevant switching loss, EMC/EMI, surge voltage, and unexpected characteristics such as vibration, without deviating from the descriptions contained in the data sheet.

The gate resistance value (R_G) greatly impacts dv/dt, radiation noise, voltage/current surge, and switching loss. Please comprehensively determine an appropriate value that corresponds to the target figure of your actual design. As for reference, a recommended turn-on resistance value (R_G(on)) is twice or higher than that of the standard value from datasheet, and a recommended turn-off resistance value (R_G(off)) is one to two times that of the standard value.

A surge voltage is generated by high di/dt, and wiring inductance outside the module, at the time of switching (L*di/dt). Some of the ways to suppress this problem are as follows:
(1) Add a protective circuit
(2) Reduce di/dt by adjusting R_G or -V_GE
(3) Reduce inductance by making the main circuit wiring thicker and shorter, and using a copper bar and parallel flat wiring
For details, refer to Application Manual Chapter 5.

"Refer to the data sheet where internal gate resistance (R_G) values for the 6th-generation V-series and 7th-generation X-series IGBT module are described.
Please contact us with a model type number if it is not shown in the 6th-generation data sheet or if it is a product prior to the 6th-generation (U-series, S-series)."

A larger gate resistance (R_G) will increase switching loss, and make it more prone to generating an arm short circuit due to an insufficient dead-time. A smaller gate resistance (R_G)may cause a sudden surge voltage. For details, refer to Application Manual Chapters 2-2.2 and 7-1.3.

Please measure at the main terminal of the product. If a terminal is separately specified for measurement in the data sheet, please use the specified terminal.

An insufficient reverse-bias voltage (-V_GE) between the gate and emitter may cause the IGBT to mis-fire, leading to a short-circuit current. If the current is cut off the surge voltage and the generated loss may damage the product. For details, refer to Application Manual Chapters 4-3.3 and 7-1.2.

Please apply a reverse-bias voltage (-V_GE) of -5 V or higher (-15 V recommended; max. -20 V) between the gate and emitter in the IGBT that is not being used. An insufficient reverse-bias voltage (-V_GE) may cause the IGBT to misfire due to dV/dt at the time of reverse-recovery of the FWD, resulting in damage.
For details, refer to Application Manual Chapter 3-10.

Refer to Application Manual Chapter 7-5. It provides precautions regarding the photo-coupler's noise capability, wiring between the drive circuit and IGBT, and gate overvoltage protection.

The minimum temperature is specified by the storage temperature (T_stg). Please consider that there will be a reduced device withstand voltage and peripheral component (capacitor, control circuit) characteristics under low temperature before use.

Our IPM is designed with a lowest guaranteed operating temperature of T_c=-20^oC. Operation below this temperature has not been evaluated, and any use below -20^oC will void your warranty. At such temperature, there are concerns about possible malfunctions due to a lower device withstand voltage or reduced capacity of the used capacitor.

A lower temperature reduces the IGBT's maximum collector-emitter voltage (V_CES). The data sheet describes the maximum collector-emitter voltage (V_CES) under the condition of T_j=25^oC. Refer to the technical information describing temperature dependency included in the technical documents under Design Support.

Fuji provides a free software to calculate the IGBT losses. The following steps can be followed to obtain the figure.
(1) Download our Loss Simulator
(2) Launch our Loss Simulator
(3) Enter data on the chip series, circuit configuration, voltage rating, and current rating. Select your model type. Click ""Next""
(4) Enter data on the circuit, PWM modulation scheme, and calculation conditions. Click ""Calculate""
(5) The calculation result will be displayed
For details, refer to the user manual.

The IGBT Simulator can estimate the power loss and temperature for a 3-phase 2-level inverter circuit, 3-phase 3-level inverter circuit, and chopper circuit of an IGBT and FWD. It can also calculate loss and temperature under variable inverter operation conditions such as output current and switching frequency. Changes in loss and temperature when the load continuously fluctuates, can also be obtained.

Refer to the "Maximum Ratings: Case temperature" section in the data sheet.

Junction temperature can be estimated based on generated losses and thermal resistance R_th(j-c). For details, refer to Application Manual Chapter 6-2.1.
We provide a free software to calculate IGBT's temperature at 2-level inverter, 3-level inverter, and chopper circuits. This software can be downloaded here.

The maximum allowable temperature for the chip during conventional continuous operation is specified in T_j(op). Please ensure the maximum chip temperature stays at or under T_j(op) during conventional continuous operation. The maximum allowable temperature for a chip during short-term overload or abnormal operation is specified inT_j(max).

The following illustrates an example of how to measure case temperature (T_c).
One method is to make a groove on a copper base or a heat sink of an IGBT module to embed a thermocouple. Please fill the groove with highly thermally conductive paste to secure the thermocouple and attain even thermal diffusion.

Please contact Fuji Electric Corp. of America or your local sales representative or distributor to answer your question.

No, prior to using an IGBT module, please apply thermal grease (compound) on the surface of a heat sink and module before layering. This will reduce the contact thermal resistance. For details, refer to Application Manual Chapter 6-3.3 or Mounting Instruction.